2SA1171-E [KEXIN]
PNP Transistors;
| 型号： | 2SA1171-E |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 光电二极管 |
| 文件： | 总2页 (文件大小：725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1171
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
1
2
Low frequency small signal amplifier
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-90
Unit
V
-90
V
-5
V
-50
mA
mW
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-90
-90
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= -100 uA， I
Ic= -1 mA，RBE=∞
= -100μA， I =0
CB= -75 V , I =0
=0
E=0
CEO
EBO
I
E
C
I
CBO
EBO
V
V
E
-0.5
-0.1
-0.5
-1.2
-0.75
800
uA
V
I
EB= -5 V , I
=-10 mA, I
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
BE(sat)
I
C
B
B
=-1mA
=-1mA
V
I
C
=-10 mA, I
CE=-12V,I
CE=-12V,I
CB= -25 V , I
=-2 mA
V
BE
V
V
V
V
C
=-2mA
=-2mA
=0, f=1MHz
DC current transfer ratio
h
FE
250
C
Collector output capacitance
Transition frequency
C
ob
T
E
1.6
pF
f
I
C
200
MHz
CE=-12V,
■ Classification of hfe
Type
Range
Marking
2SA1171-D
250-500
PD
2SA1171-E
400-800
PE
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1171
■ Typical Characterisitics
Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
。
Ambient Temperature Ta ( C)
2
www.kexin.com.cn
相关型号：
2SA1171PD
Small Signal Bipolar Transistor, 0.05A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
HITACHI
2SA1171PD01
Small Signal Bipolar Transistor, 0.05A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
HITACHI
2SA1171PDTR
Small Signal Bipolar Transistor, 0.05A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
HITACHI
2SA1171PDUL
Small Signal Bipolar Transistor, 0.05A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
HITACHI
2SA1171PETL
Small Signal Bipolar Transistor, 0.05A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
HITACHI
©2020 ICPDF网 联系我们和版权申明