1SV229 [KEXIN]
Silicon Epitaxial Planar Diode; 硅外延平面二极管
| 型号： | 1SV229 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon Epitaxial Planar Diode |
| 文件： | 总1页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV229
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
+0.1
2.6
-0.1
1.0max
Ultra low series resistance: rs = 0.2 (typ.)
Useful for small size set
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
15
Unit
V
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
Typ
Max
Unit
V
15
IR = 1
A
Reverse Current
Capacitance
IR
VR = 15 V
3
nA
C2V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 10 V
14
5.5
2
15
6
16
6.5
pF
C10V
C2V/C10V
rs
Capacitance Ratio
Series Resistance
2.5
0.2
VR = 5V, f = 470 MHz
0.4
Marking
Marking
T8
1
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