MBR20150FCT [KERSEMI]
20 Amp High Voltage Power Schottky Barrier Rectifier 150Volts; 20安培高压功率肖特基整流器150Volts
| 型号： | MBR20150FCT |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | 20 Amp High Voltage Power Schottky Barrier Rectifier 150Volts |
| 文件： | 总3页 (文件大小：1217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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20736 Marilla Street Chatsworth
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MBR20150FCT
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Features
•
High Junction Temperature Capability
20 Amp High Voltage
Power Schottky
Barrier Rectifier
150Volts
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Leakage Current
•
•
•
•
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:type number
Maximum Ratings
ITO-220AB
•
•
Operating Junction Temperature : 150°C
Storage Temperature: - 50°C to +150°C
B
L
•
Per diodeThermal Resistance 2.2°C/W Junction to Case
Total Thermal Resistance 1.3°C/W Junction to Case
M
•
C
D
MCC
Catalog
Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum Maximum
DC
PIN
A
K
RMS
Voltage
1
2
3
Blocking
Voltage
150V
MBR 20150 FCT
150 V
105V
E
J
F
G
O
I
N
H
H
Electrical Characteristics @ 25°C Unless Otherwise Specified
PIN 1
PIN 3
PIN 2
Average Forward
Current
IF(AV)
20 A
TC = 155°C
Peak Forward Surge
Current
Maximum
IFSM
180A
8.3ms,half
sine wave
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Instantaneous
Forward Voltage
MBR20150FCT
INCHES
ꢃꢂꢄ
MM
ꢁꢂꢃ
A
B
C
D
E
ꢃꢅꢆ
.630
.406
.112
ꢃꢂꢄ
14.80
---
ꢃꢅꢆ
16.00
10.30
2.85
ꢄꢇꢈꢉ
.583
---
.100
.248
---
IFM = 10A
VF
.92V
.75V
TJ = 25°C
IFM = 10A
2.55
.272
.161
6.30
---
6.90
4.10
V
F
F
G
---
.512
.071
.543
---
13.00
1.80
13.80
TJ = 125°C
H
.100
2.55
I
J
---
---
.035
.032
---
---
0.90
0.80
K
.118
.134
3.00
3.40
Maximum
L
M
N
O
---
---
.098
---
.189
.130
.114
.055
---
---
2.50
---
4.80
3.30
2.90
1.40
IR
25 µ A
5m A
TJ = 25°C
TJ = 125°C
Reverse Current At
Rated DC Blocking
Voltage
www.kersemi.com
MBR20150FCT
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
IF(av)(A)
10
12
δ = 0.2
δ = 0.1
δ = 0.5
δ = 0.05
9
8
7
6
5
4
3
2
1
0
Rth(j-a)=Rth(j-c)
10
δ = 1
8
6
Rth(j-a)=15°C/W
4
T
T
2
Tamb(°C)
IF(av) (A)
tp
=tp/T
δ
tp
=tp/T
δ
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
25
50
75
100
125
150
175
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
Zth(j-c)/Rth(j-c)
150
1.0
125
100
0.8
δ = 0.5
0.6
Tc=50°C
75
Tc=75°C
δ = 0.2
0.4
50
δ = 0.1
T
Tc=125°C
IM
0.2
25
Single pulse
t
t(s)
tp(s)
δ=0.5
tp
=tp/T
δ
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
C(pF)
1E+5
1000
F=1MHz
Tj=25°C
Tj=175°C
1E+4
Tj=150°C
1E+3
Tj=125°C
1E+2
100
Tj=100°C
1E+1
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
10
0
25
50
75
100
125
150
1
2
5
10
20
50
100 200
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MBR20150FCT
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8: Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness: 35µm) (STPS20150CG only).
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
Tj=125°C
Typical values
60
50
40
30
20
10.0
Tj=125°C
Tj=25°C
1.0
VFM(V)
10
S(cm²)
0.1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
2
4
6
8
10 12 14 16 18 20
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相关型号：
MBR20150FCT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 150V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
MCC
MBR20150FCT-BP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
MCC
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