FQPF7N60 [KERSEMI]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FQPF7N60 |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2000
FQPF7N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
4.3A, 600V, R
= 1.0Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 29 nC)
Low Crss ( typical 16 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
"
! "
"
G !
"
G D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
ꢀꢀ
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQPF7N60
600
Units
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
4.3
A
D
C
- Continuous (T = 100°C)
2.7
A
C
I
(Note 1)
Drain Current
- Pulsed
17.2
±ꢀ30
A
DM
V
E
I
Gate-Source Voltage
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
580
mJ
A
4.3
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.8
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)
48
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.38
-55 to +150
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8ꢀ from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
2.60
62.5
Units
°CꢁW
°CꢁW
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
θ
θ
JC
JA
--
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
I
= 0 V, I = 250 µA
Drain-Source Breakdown Voltage
600
--
--
--
--
V
DSS
GS
D
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
= 250 µA, Referenced to 25°C
0.67
V/°C
D
/
I
∆T
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
5.0
1.0
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
=10V,I =2.2A
0.8
6.4
D
g
= 50 V, I = 2.2 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1100
135
16
1430
175
21
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
30
80
65
60
29
7
70
170
140
130
38
ns
ns
d(on)
V
= 300 V, I = 7.4 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 480 V, I = 7.4 A,
DS
D
--
= 10 V
gs
gd
GS
14.5
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.3
17.2
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 4.3 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 7.4 A,
320
2.4
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 57.6mH, I = 4.3A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ꢀ 7.4A, di/dt ꢀ 200A/µs, V ꢀ BV
Starting T = 25°C
4. Pulse Test : Pulse width ꢀ 300µs, Duty cycle ꢀ 2%
SD
DD
DSS, J
5. Essentially independent of operating temperature
V
Top : 15.0GVS
10.0 V
8.0 V
7.5 V
7.0 V
101
101
6.5 V
6.0 V
Bottom: 5.5 V
100
100
ꢀ
150
ꢀ
25
ꢀ
Notes :
ꢀ
Notes :
ꢁ
1. VDS = 50V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
ꢀ
-55
ꢁ
ꢂ
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
VGS = 20V
100
ꢀ
Notes :
ꢀ
ꢀ
25
150
1. VGS = 0V
2. 250 s Pulse Test
ꢀ
ꢁ
Note : TJ = 25
ꢁ
-1
0
5
10
15
20
25
10
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 120V
VDS = 300V
VDS = 480V
Crss = C
gd
1600
1200
800
400
0
C
iss
C
oss
6
4
ꢀ
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
ꢀ
Note : ID = 7.4A
0
0
5
10
15
20
25
30
35
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ꢀ
Notes :
1. VGS = 0 V
ꢀ
Notes :
ꢁ
2. ID = 250
A
1. V = 10 V
2. IDG=S 3.7 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
5
102
101
100
10-1
10-2
Operation in This Area
is Limited by RDS(on)
4
3
2
1
0
100
s
µ
1 ms
10 ms
100 ms
DC
ꢀ
Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
ꢀ
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 . 5
1 0 0
0 . 2
0 . 1
ꢀ
N o t e s
:
ꢁ
1 . C(t )
Z
=
2 .6 0
/W M a x .
ꢀ
J
2 . D u t y F a c t o r , D = t 1 /t 2
0 . 0 5
3 . T J
-
T C
=
P D
*
Z
C(t )
ꢀ
M
M
J
1 0 -1
0 . 0 2
PDM
0 . 0 1
t1
t2
s i n g le p u ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
VGS
10V
Same Type
as DUT
50Kꢀ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
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