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KTC3790S [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION; 外延平面NPN晶体管VHF / UHF宽带放大器应用
KTC3790S
型号： KTC3790S
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION
外延平面NPN晶体管VHF / UHF宽带放大器应用

晶体 放大器 晶体管 局域网
文件： 总5页 (文件大小：494K)
中文：  中文翻译
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SEMICONDUCTOR  
KTC3790S  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.  
FEATURES  
E
Low Noise Figure, High Gain.  
NF=1.2dB, |S21e|2=13dB (f=1GHz).  
L
B
L
DIM MILLIMETERS  
_
+
A
B
C
D
E
2.93 0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
1
G
H
J
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
20  
UNIT  
V
K
L
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
10  
V
M
1.5  
V
Collector Current  
65  
mA  
mW  
1. EMITTER  
2. BASE  
PC  
Collector Power Dissipation  
Junction Temperature  
150  
3. COLLECTOR  
Tj  
150  
Tstg  
SOT-23  
Storage Temperature Range  
-55 150  
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
R
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
A
VCB=10V, IE=0  
VEB=1V, IC=0  
-
-
-
-
1
1
IEBO  
Emitter Cut-off Current  
DC Current Gain  
A
hFE (Note1)  
Cre  
VCE=8V, IC=20mA  
50  
-
-
250  
0.9  
-
VCB=10V, IE=0, f=1MHz (Note2)  
VCE=8V, IC=20mA  
Reverse Transfer Capacitance  
Transition Frequency  
Insertion Gain  
0.35  
9
pF  
GHz  
dB  
fT  
-
2
|S21e  
NF  
|
VCE=8V, IC=20mA, f=1GHz  
VCE=8V, IC=7mA, f=1GHz  
11  
-
13  
1.2  
-
Noise Figure  
2.5  
dB  
Note 1 : hFE Classification  
L:50~100, M:80~160, N:125~250.  
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.  
2007. 8. 22  
Revision No : 0  
1/5  
KTC3790S  
TYPICAL CHARACTERISTICS  
h
- I  
Cre - V  
FE  
C
CB  
3
2
300  
200  
100  
70  
1
0.5  
50  
30  
V
=8V  
f =1.0MHz  
Ta=25 C  
CE  
Ta=25 C  
0.1  
10  
0.5  
1
5
10  
50  
1
5
10  
20  
30  
COLLECTOR-BASE VOLTAGE V  
(V)  
COLLECTOR CURRENT I (mA)  
C
CB  
S
21e  
2 - I  
C
f T - I C  
30  
20  
15  
10  
5
10  
5
1
V
= 8V  
CE  
V
=8V  
CE  
f = 1.0GHz  
Ta=25 C  
Ta=25 C  
0
1
0.5  
1
5
10  
20  
30  
5
10  
50 70  
COLLECTOR CURRENT I (mA)  
C
COLLECTOR CURRENT I (mA)  
C
S
21e  
2 - f  
NF - I C  
20  
16  
12  
8
7
V
= 8V  
V
=8V  
CE  
CE  
6
5
4
3
2
1
0
f = 1.0GHz  
Ta=25 C  
I =20mA  
C
Ta=25 C  
2
S21e  
4
0
0.1  
0.5  
1.0  
2.0  
3.0  
0.5  
1
5
10  
50 70  
FREQUENCY f (GHz)  
COLLECTOR CURRENT I (mA)  
C
2007. 8. 22  
Revision No : 0  
2/5  
KTC3790S  
Pc - Ta  
200  
100  
0
0
50  
100  
150  
AMBIENT TEMPERATURE Ta ( C)  
S-PARAMETER  
(VCE = 8V, IC = 5mA, ZO=50  
Ta = 25  
)
S11  
S21  
S21  
S22  
Frequency  
MHz  
200  
Mag.  
0.728  
0.490  
0.343  
0.253  
0.202  
0.176  
0.176  
0.179  
0.186  
0.211  
Ang.  
-45.3  
Mag.  
12.107  
8.097  
6.260  
4.623  
4.004  
3.250  
3.021  
2.575  
2.520  
2.183  
Ang.  
138.7  
114.2  
102.3  
90.1  
83.6  
75.8  
69.4  
63.4  
58.9  
53.4  
Mag.  
0.036  
0.065  
0.079  
0.090  
0.101  
0.125  
0.144  
0.160  
0.188  
0.202  
Ang.  
66.2  
61.6  
61.6  
61.2  
61.3  
60.8  
60.0  
59.8  
59.1  
58.9  
Mag.  
0.825  
0.675  
0.582  
0.529  
0.500  
0.470  
0.448  
0.427  
0.406  
0.386  
Ang.  
-21.6  
-26.6  
-29.0  
-28.6  
-30.1  
-31.4  
-33.4  
-34.8  
-37.5  
-44.5  
400  
-74.5  
600  
-93.2  
800  
-110.1  
-131.1  
-148.9  
-162.8  
173.9  
163.3  
151.1  
1000  
1200  
1400  
1600  
1800  
2000  
(VCE = 8V, IC = 20mA, ZO=50  
Ta = 25 )  
S11  
S21  
S21  
S22  
Frequency  
MHz  
200  
Mag.  
0.366  
0.194  
0.124  
0.077  
0.063  
0.065  
0.074  
0.108  
0.116  
0.134  
Ang.  
-66.8  
Mag.  
19.757  
10.502  
7.591  
5.446  
4.653  
3.754  
3.460  
2.934  
2.870  
2.479  
Ang.  
116.9  
98.8  
91.1  
82.0  
77.6  
71.6  
66.5  
61.9  
58.2  
53.4  
Mag.  
0.033  
0.055  
0.072  
0.095  
0.107  
0.135  
0.164  
0.178  
0.205  
0.221  
Ang.  
62.6  
70.6  
74.6  
73.2  
72.1  
72.1  
70.1  
69.6  
66.3  
64.0  
Mag.  
0.587  
0.485  
0.453  
0.419  
0.413  
0.392  
0.369  
0.347  
0.333  
0.312  
Ang.  
-22.5  
-23.8  
-24.3  
-23.2  
-24.2  
-26.4  
-29.9  
-32.2  
-34.3  
-42.1  
400  
-88.9  
600  
-104.3  
-132.0  
-156.4  
179.5  
168.0  
147.0  
137.6  
131.2  
800  
1000  
1200  
1400  
1600  
1800  
2000  
2007. 8. 22  
Revision No : 0  
3/5  
KTC3790S  
S
S
11e  
=8V  
12e  
V =8V  
V
CE  
=5mA  
CE  
I =5mA  
C
I
C
Ta=25 C  
(UNIT : Ω)  
Ta=25 C  
90  
j50  
60  
120  
j25  
j100  
2GHz  
30  
j150  
j250  
150  
j10  
2GHz  
f=0.2GHz  
0.061  
0.24  
100  
250  
_
0.12  
0.18  
+
0
180  
25  
0
10  
50  
0
-j10  
-j250  
f=0.2GHz  
-30  
-150  
-j150  
-j25  
-j100  
-60  
-120  
-j50  
-90  
S
S
21e  
=8V  
22e  
V =8V  
V
CE  
=5mA  
CE  
I =5mA  
C
Ta=25 C  
I
C
j50  
90  
Ta=25 C  
60  
120  
(UNIT : Ω)  
j25  
j100  
j150  
30  
150  
f=0.2GHz  
j10  
j250  
2GHz  
3.6  
100  
250  
_
10  
25  
50  
0
7.3  
11  
+
15  
0
180  
0
f=0.2GHz  
2GHz  
-j10  
-j250  
-30  
-j150  
-150  
-j25  
-j100  
-60  
-120  
-j50  
-90  
2007. 8. 22  
Revision No : 0  
4/5  
KTC3790S  
S
S
11e  
=8V  
12e  
V =8V  
V
CE  
=20mA  
CE  
I =20mA  
C
I
C
Ta=25 C  
(UNIT : Ω)  
Ta=25 C  
90  
j50  
60  
120  
j25  
j100  
2GHz  
j150  
j250  
30  
150  
j10  
2GHz  
f=0.2GHz  
0.066  
0.27  
100  
250  
_
0.13  
+
0.2  
180  
10  
25  
50  
0
0
0
f=0.2GHz  
-j10  
-j250  
-30  
-150  
-j150  
-j25  
-j100  
-60  
-120  
-j50  
-90  
S
S
21e  
=8V  
22e  
V =8V  
V
CE  
=20mA  
CE  
I =20mA  
C
Ta=25  
(UNIT : Ω)  
I
C
j50  
90  
Ta=25 C  
C
60  
120  
f=0.2GHz  
j25  
j100  
j150  
30  
150  
j10  
j250  
100  
250  
2GHz  
10  
25  
50  
_
0
5.9  
12  
18  
+
180  
24  
0
0
2GHz  
f=0.2GHz  
-j10  
-j250  
-j150  
-30  
-150  
-j25  
-j100  
-60  
-120  
-j50  
-90  
2007. 8. 22  
Revision No : 0  
5/5  

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