KTC3572 [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管


型号：	KTC3572
厂家：	KEC(KOREA ELECTRONICS)
描述：	EPITAXIAL PLANAR NPN TRANSISTOR 外延平面NPN晶体管晶体晶体管局域网
文件：	总3页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

KTC3572

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

FEATURE

Low Collector-Emitter Saturation Voltage V_CE(sat)

High Collector Current Capability : I_Cand I_CP

Higher Efficiency Leading to Less Heat Generation.

DIM MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

DEPTH:0.2

1.15 MAX

1.27

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

1.70 MAX

0.55 MAX

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

120

14.00+0.50

0.35 MIN

0.75+0.10

100

Collector Current

Pulse

1.25

Φ1.50

0.10 MAX

I_CP

300

12.50+0.50

I_B

Base Current

1.00

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

1. EMITTER

2. COLLECTOR

3. BASE

T_j

150

T_stg

-55 150

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage **

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL

V_(BR)CBO

TEST CONDITION

MIN.

TYP.

MAX. UNIT

I_C=100 A

I_C=1mA

120

V_(BR)CEO

V_(BR)EBO

I_CBO

100

I_E=100 A

V_CB=80V

100

0.04

0.12

0.2

1.05

0.9

I_EBO

V_EB=4V, I_C=0A

Emitter Cut-Off Current

I_CES

V_CES=80V, V_BE=0V

I_C=100mA, I_B=10mA

I_C=500mA, I_B=50mA

I_C=1A, I_B=100mA

V_CE=10V, I_C=1A

Collector-Emitter Cut-Off Current

V_CE(sat)(1)

V_CE(sat)(2)

V_CE(sat)(3)

V_BE(sat)

V_BE

Collector-Emitter Saturation Voltage **

Base-Emitter Saturation Voltage **

Base-Emitter Voltag

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

f_T

V_CE=10V, I_C=1mA

V_CE=10V, I_C=250mA

V_CE=10V, I_C=500mA

V_CE=10V, I_C=1A

150

100

500

DC Current Gain **

V_CE=10V, I_C=50mA, f=100MHz

V_CB=10V, f=1MHz

Transition Frequency

MHz

C_ob

Collector Output Capacitance

** Pulse Width = 300 S, Duty Cycle 2%.

9.5

2010. 6. 4

Revision No : 0

1/3

KTC3572

V_CE(sat)- I_C

I /I =50

I /I =10

C B

Ta=25 C

Ta=100 C

10^-1

Ta=25 C

Ta=-55 C

10^-2

10^-1

10^-2

10^-1

10²

10³

10⁴

10²

10³

10⁴

COLLECTOR CURRENT I (mA)

- I _C

h_FE- I_C

1.2

0.8

0.4

600

400

200

=10V

Ta=100 C

Ta=25 C

Ta=-55 C

Ta=25 C

Ta=100 C

Ta=-55 C

-10^-1

-1

-10

-10²

-10³

-10⁴

-10^-1

-1

-10

-10²

-10³

-10⁴

COLLECTOR CURRENT I (mA)

I_C- V_CE

V_BE(sat)- I_C

1.6

1.2

0.8

0.4

I =3500µA

I /I =20

I =3150µA

I =2800µA

Ta=25 C

I =2450µA

I =1400µA

I =1050µA

I =1750µA

I =2100µA

I =700µA

I =350µA

10^-1

10²

10³

10⁴

COLLECTOR-EMITTER VOLTAGE V (V)

COLLECTOR CURRENT I (mA)

2010. 6. 4

Revision No : 0

2/3

KTC3572

SAFE OPERATING AREA

I_CMAX(PULSE)*

1mS*

100mS 10mS*

I_CMAX(CONTINUOUS)

DC OPERATION(Ta=25 C)

0.1

0.01

*SINGLE NONREPETTTTVE PULSE Ta=25 C

CURVES MUST BE DERATED

LINEARLY WITH INCREASE IN TEMPERATURE

0.001

0.1

100

1000

COLLECTOR-EMITTER VOLTAGE V

(V)

2010. 6. 4

Revision No : 0

3/3

相关型号：