KRA107S_04 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KRA107S_04 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KRA107S~KRA109S
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
With Built-in Bias Resistors.
Simplify Circuit Design.
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
Reduce a Quantity of Parts and Manufacturing Process.
1
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
TYPE NO.
KRA107S
KRA108S
KRA109S
R1(k
10
)
R2(k
47
)
M
OUT
1. COMMON (EMITTER)
2. IN (BASE)
R1
IN
22
47
3. OUT (COLLECTOR)
47
22
R2
COMMON(+)
SOT-23
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
VO
RATING
-50
UNIT
V
Output Voltage
Input Voltage
KRA107S 109S
KRA107S
-30, 6
-40, 7
-40, 15
-100
VI
KRA108S
V
KRA109S
IO
PD
Tj
Output Current
mA
Power Dissipation
Junction Temperature
200
mW
KRA107S 109S
150
Tstg
Storage Temperature Range
-55 150
Marking
MARK SPEC
Lot No.
TYPE
KRA107S
PH
KRA108S
PI
KRA109S
PJ
MARK
Type Name
2004. 1. 8
Revision No : 3
1/4
KRA107S~KRA109S
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
IO(OFF)
TEST CONDITION
VO=-50V, VI=0
MIN.
TYP.
-
MAX.
UNIT
nA
Output Cut-off Current
DC Current Gain
Output Voltage
-
-500
KRA107S 109S
KRA107S
KRA108S
KRA109S
KRA107S 109S
KRA107S
KRA108S
KRA109S
KRA107S
KRA108S
KRA109S
KRA107S 109S
KRA107S
KRA108S
KRA109S
KRA107S
KRA108S
KRA109S
KRA107S
KRA108S
KRA109S
KRA107S
KRA108S
KRA109S
80
150
150
140
-0.1
-1.2
-1.8
-3.0
-0.75
-0.88
-1.82
200
-
-
GI
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
80
-
70
-
VO(ON)
-
-0.3
V
V
-
-1.8
VI(ON)
Input Voltage (ON)
-
-2.6
-
-5.8
-0.5
-
VI(OFF)
fT *
II
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA
VI=-5V
Input Votlage (OFF)
Transition Frequency
Input Current
-0.6
-
V
-1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MHz
mA
-0.88
-
-0.36
-
-0.16
0.07
0.20
0.38
1.1
-
-
-
-
-
-
-
-
-
Rise
tr
tstg
tf
Time
VO=-5V, VIN=-5V
RL=1k
Storage
Time
Switching
Time
1.3
S
0.7
0.35
0.4
Fall
Time
0.48
Note : * Characteristic of Transistor Only.
2004. 1. 8
Revision No : 3
2/4
KRA107S~KRA109S
IO - VI(ON)
IO - VI(OFF)
KRA107S
KRA107S
-3k
-100
-25
25
V
=-0.2V
V
O
=-5V
O
-50
-30
100
-1k
-500
-300
-10
C
-5
-3
Ta=25 C
Ta=-25 C
Ta=100
-100
-1
-50
-30
-0.5
-0.3
-0.1
-0.3
-1
-3
-10
-30
(V)
-100
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
INPUT ON VOLTAGE V
INPUT OFF VOLTAGE V
(V)
I(ON)
I(OFF)
IO - VI(ON)
IO - VI(OFF)
KRA108S
KRA108S
-3k
-1k
-100
V
=-5V
O
V
O
=-0.2V
-50
-30
-500
-300
-10
-5
-3
Ta=25 C
Ta=-25 C
-100
-1
-50
-30
-0.5
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
-0.1
-0.3
-1
-3
-10
-30
(V)
-100
INPUT ON VOLTAGE V
INPUT OFF VOLTAGE V
(V)
I(ON)
I(OFF)
IO - VI(ON)
IO - VI(OFF)
KRA109S
KRA109S
-3k
-1k
-100
V
=-0.2V
V =-5V
O
O
-50
-30
-500
-300
-10
-5
-3
Ta=25 C
Ta=-25 C
-100
-1
-50
-30
-0.5
-0.3
-0.2 -0.6 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -3.4
-0.1
-0.3
-1
-3
-10
I(ON)
-30
(V)
-100
INPUT ON VOLTAGE V
INPUT OFF VOLTAGE V (V)
I(OFF)
2004. 1. 8
Revision No : 3
3/4
KRA107S~KRA109S
GI - I O
GI - I O
KRA107S
KRA108S
1k
1k
V
=-5V
V =-5V
O
O
500
300
500
300
Ta=100 C
Ta=25 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=-25 C
100
50
100
50
20
20
-1
-3
-10
-30
-100
-1
-3
-10
-30
-100
OUTPUT CURRENT I
(mA)
OUTPUT CURRENT I (mA)
O
O
GI - I O
KRA109S
1k
V
=-5V
O
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
20
-1
-3
-10
-30
-100
OUTPUT CURRENT I
(mA)
O
2004. 1. 8
Revision No : 3
4/4
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