KF2N60DI [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;
| 型号： | KF2N60DI |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KF2N60D/I
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF2N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
A
C
K
DIM MILLIMETERS
L
D
B
_
A
B
C
D
E
6.60 + 0.20
_
6.10+0.20
_
5.34 + 0.30
_
0.70+0.20
_
2.70 + 0.15
FEATURES
_
2.30+0.10
F
0.96 MAX
0.90 MAX
G
H
J
· VDSS= 600V, ID= 2.0A
· RDS(ON)=4.4Ω (Max) @VGS = 10V
· Qg(typ) = 6.0nC
H
J
_
1.80+0.20
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
F
F
M
M
N
O
0.50+0.10
0.70 MIN
0.1 MAX
MAXIMUM RATING (Tc=25℃)
1
2
3
1. GATE
2. DRAIN
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
600
UNIT
V
3. SOURCE
O
VGSS
V
±30
2.0
ID
DPAK (1)
KF2N60I
Drain Current
@TC=100℃
1.2
A
IDP
Pulsed (Note1)
4.0
Single Pulsed Avalanche Energy
(Note 2)
EAS
60
2.3
4.5
mJ
mJ
A
C
H
Repetitive Avalanche Energy
(Note 1)
EAR
J
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
DIM MILLIMETERS
40.3
0.32
W
W/℃
℃
Tc=25℃
_
0.2
A
B
C
D
E
F
6.6
+
Drain Power
Dissipation
PD
_
6.1 0.2
+
M
Derate above 25℃
_
5.34 0.3
+
P
_
0.7 0.2
+
N
Tj
Maximum Junction Temperature
Storage Temperature Range
150
_
9.3 0.3
+
_
2.3 0.2
+
Tstg
-55∼ 150
℃
_
0.76 0.1
G
H
J
+
G
_
2.3 0.1
+
Thermal Characteristics
_
L
0.5 0.1
+
F
F
RthJC
RthJA
Thermal Resistance, Junction-to-Case
3.1
_
℃/W
℃/W
K
L
M
N
P
1.8 0.2
+
_
+
0.5
0.1
Thermal Resistance, Junction-to-
Ambient
_
1.0 0.1
+
110
0.96 MAX
_
1
2
3
1.02 0.3
+
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF2N60D/I)
IPAK(1)
D
G
S
2011. 9. 21
Revision No : 1
1/6
KF2N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
600
-
0.6
-
-
-
V
V/℃
㎂
-
-
IDSS
Vth
VDS=600V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±30V, VDS=0V
VGS=10V, ID=1A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
10
2.5
-
-
4.5
±100
4.4
V
IGSS
-
nA
RDS(ON)
-
3.7
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
6.0
1.0
2.8
10
-
-
-
-
-
-
-
-
-
-
VDS=480V, ID=2A
Gate-Source Charge
Gate-Drain Charge
nC
VGS=10V
(Note4,5)
(Note4,5)
Turn-on Delay time
Turn-on Rise time
VDD=300V
ID=2A
20
ns
td(off)
tf
Turn-off Delay time
Turn-off Fall time
25
RG=25Ω
20
Ciss
Coss
Crss
Input Capacitance
270
35
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
pF
3.9
IS
ISP
VSD
trr
Continuous Source Current
Pulsed Source Current
-
-
-
-
-
-
-
2
8
VGS<Vth
A
IS=2A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
1.4
-
V
ns
290
0.9
IS=2A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=28mH, IS=2A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 2A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF2N60
KF2N60
2
2
001
001
D
I
1
2
PRODUCT NAME
LOT NO
2011. 9. 21
Revision No : 1
2/6
KF2N60D/I
Fig1. I - V
Fig2. I - V
D GS
D
DS
101
100
10-1
101
100
10-1
10-2
V
=10V
GS
V
=7V
GS
TC=100 C
V
=5V
GS
25 C
0.1
10
Drain - Source Voltage VDS (V)
2
4
6
8
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DSS
j
DS(ON) D
1.2
1.1
1.0
0.9
0.8
12.0
10.0
8.0
6.0
4.0
2.0
0
VGS = 0V
IDS = 250
V
=6V
GS
V
=10V
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
100
-100
-50
0
50
150
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
101
100
10-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
= 1A
GS
DS
TC=100 C
25 C
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
)
C
Source - Drain Voltage VSD
j
2011. 9. 21
Revision No : 1
3/6
KF2N60D/I
Fig 7. C - VDS
Fig8. Q - VGS
g
12
10
8
1000
100
10
ID=2A
C
iss
6
C
V
= 480V
oss
DS
4
2
C
rss
40
1
0
1
3
4
7
8
0
5
10
15
20
25
30
35
0
2
5
6
Gate - Charge
Q
(nC)
g
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
Fig10. ID - Tj
101
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Operation in this
area is limited by RDS(ON)
10µs
100µs
1ms
10ms
DC
10-1
T = 25
C
c
C
T = 150
j
Single pulse
10-2
102
103
100
101
0
25
50
75
100
125
150
Drain - Source Voltage V
(V)
DS
Junction Temperature T
(
)
C
j
Fig11. Transient Thermal Response Curve
101
Duty=0.5
100
0.2
0.1
P
DM
t
10-1
1
e
s
t
2
Pul
Single
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2011. 9. 21
Revision No : 1
4/6
KF2N60D/I
Fig12. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig13. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DD
DSS
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig14. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2011. 9. 21
Revision No : 1
5/6
KF2N60D/I
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2011. 9. 21
Revision No : 1
6/6
相关型号：
KF2N60L
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
KEC
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