KDS221E [KEC]

SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
KDS221E
型号: KDS221E
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

SILICON EPITAXIAL PLANAR DIODE
硅外延平面二极管

二极管 局域网
文件: 总2页 (文件大小:74K)
下载:  下载PDF数据表文档文件

KDS221V

SILICON EPITAXIAL PLANAR DIODE

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25 KEC

KDS2236

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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144 KEC

KDS2236

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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32 KEC

KDS2236M

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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31 KEC

KDS2236S

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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77 KEC

KDS226

SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

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650 KEC

KDS226

Low Forward Voltage.:VF=0.9V

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63 TYSEMI

KDS2572

RDS(ON) = 0.040 (Typ.), VGS = 10V Maximized efficiency at high frequencies

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25 TYSEMI

KDS2572

N-Channel UltraFET Trench MOSFET

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17 KEXIN

KDS-29008

Speaker - Mylar Cone

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7 ETC

KDS33

Intrusion Switches

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32 CK-COMPONENTS

KDS33

Intrusion Switches

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107 ITT

KDS3512

4.0 A, 80 V. RDS(ON) = 70m VGS = 10 V High power and current handling capability

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8 TYSEMI

KDS3512

80V N-Channel PowerTrench MOSFET

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11 KEXIN

KDS3601

100V Dual N-Channel PowerTrench MOSFET

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8 KEXIN