BD135 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | BD135 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总1页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BD135
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
B
D
C
FEATURES
E
High Current. (Max. : 1.5A)
Low Voltage (Max. : 45V)
DC Current Gain : hFE=40Min. @IC=0.15A
Complementary to BD136.
F
G
H
J
DIM MILLIMETERS
A
B
C
D
E
8.3 MAX
5.8
K
L
0.7
_
+
Φ3.2 0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
3.5
_
+
F
11.0 0.3
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
G
H
J
2.9 MAX
1.0 MAX
1.9 MAX
M
45
45
O
_
+
0.75 0.15
K
L
N
P
_
+
15.5 0.5
1
2
3
V
_
+
2.3 0.1
M
N
O
P
_
+
0.65 0.15
5
V
1.6
1. EMITTER
2. COLLECTOR
3. BASE
3.4 MAX
1.5
A
IB
Base Current
0.5
A
1.25
10
Ta=25
Tc=25
Collector Power
Dissipation
TO-126
PC
W
Tj
Junction Temperature
150
-55 150
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
VCB=30V, IE=0
MIN.
TYP.
MAX.
UNIT
-
-
-
0.1
10
-
A
A
IEBO
V(BR)CEO
hFE (1)
hFE (2)
hFE (3)
VCE(sat)
VBE
VEB=5V, IC=0
Emitter Cut-off Current
-
IC=30mA, IB=0
Collector-Emitter Breakdown Voltage
45
25
40
25
-
-
V
IC=5mA, VCE=2V
IC=150mA, VCE=2V
IC=500mA, VCE=2V
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=50mA
-
-
DC Current Gain
-
250
-
-
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
0.5
1.0
-
V
V
-
-
fT
Transition Frequency
-
190
MHz
2003. 6. 16
Revision No : 0
1/1
相关型号：
BD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD135-16-BP
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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