BC638 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH CURRENT TRANSISTORS); 外延平面PNP晶体管（高电流晶体管）
| 型号： | BC638 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR(HIGH CURRENT TRANSISTORS) |
| 文件： | 总1页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BC638
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
B
C
FEATURES
ᴌComplementary to BC637.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
MAXIMUM RATING (Ta=25ᴱ)
1.00
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
RATING
-60
UNIT
V
F
1.27
0.85
G
H
J
K
L
0.45
VCBO
VCEO
VEBO
IC
_
H
14.00 +0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
F
-60
V
M
-5
V
N
3
1
2
-500
625
mA
mW
ᴱ
1. EMITTER
2. COLLECTOR
3. BASE
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
Tstg
-55ᴕ150
ᴱ
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
nA
V
VCB=-30V, IE=0
-
-60
-60
-5.0
-40
-
-
-
-100
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
IC=-10mA, IB=0
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
-
IC=-100ỌA, IE=0
-
-
V
IE=-10ỌA, IC=0
-
-
160
-0.5
-1.0
-
V
VCE=-2V, IC=-150mA
IC=-500mA, IB=-50mA
VCE=-2V, IC=-500mA
-
VCE(sat)
VBE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
V
V
-
-
fT
VCE=-2V, IC=-50mA, f=100MHz
VEB=-0.5V, IC=0, f=1MHz
VCB=-10V, IE=0, f=1MHz
Transition Frequency
-
150
50
9.0
MHz
pF
Cib
Input Capacitance
-
-
Cob
Collector Output Capacitance
-
-
pF
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
2000. 10. 2
Revision No : 0
1/1
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