概述
数据手册BC637 概述
EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS) 外延平面NPN晶体管（高电流晶体管）
BC637 数据手册
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BC637
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
B
C
FEATURES
ᴌComplementary to BC638.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
MAXIMUM RATING (Ta=25ᴱ)
1.00
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
RATING
UNIT
V
F
1.27
0.85
G
H
J
K
L
0.45
VCBO
VCEO
VEBO
IC
60
60
_
H
14.00 +0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
F
V
M
5
V
N
3
1
2
500
mA
mW
ᴱ
1. EMITTER
2. COLLECTOR
3. BASE
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
625
Tj
150
Tstg
-55ᴕ150
ᴱ
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
nA
V
VCB=30V, IE=0
-
60
60
5.0
40
-
-
-
100
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
IC=10mA, IB=0
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
-
-
IC=100ỌA, IE=0
-
V
IE=10ỌA, IC=0
-
-
V
VCE=2V, IC=150mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
-
160
0.5
1.0
-
VCE(sat)
VBE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
V
V
-
-
fT
VCE=2V, IC=50mA, f=100MHz
VEB=0.5V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
Transition Frequency
-
200
50
7.0
MHz
pF
Cib
Input Capacitance
-
-
Cob
Collector Output Capacitance
-
-
pF
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
2000. 10. 2
Revision No : 0
1/1
BC637 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BC637-10 | ETC | TRANSISTOR | BJT | NPN | 1A I(C) | TO-92 | 获取价格 |
|
| BC637-10-AMMO | NXP | TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | 获取价格 |
|
| BC637-10-AP | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
| BC637-10-AP-HF | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
| BC637-10-BP | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
| BC637-10-BP-HF | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
| BC637-10-T/R | NXP | TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | 获取价格 |
|
| BC637-16 | NXP | NPN medium power transistors | 获取价格 |
|
| BC637-16-AMMO | NXP | TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | 获取价格 |
|
| BC637-16-AP | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
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