BAV70T [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | BAV70T |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BAV70T
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
E
B
· Small Package
· Low Forward Voltage
: ESM.
MILLIMETERS
_
1.60+0.10
DIM
A
: VF=0.9V (Typ.).
D
· Fast Reverse Recovery Time : trr=1.6ns(Typ.).
· Small Total Capacitance : CT=0.9pF (Typ.).
_
+
0.85 0.10
2
1
B
_
0.70+0.10
C
3
D
E
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
G
H
J
0.50
_
0.13+0.05
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
J
SYMBOL
VRM
VR
RATING
85
UNIT
V
3
Maximum (Peak) Reverse Voltage
Reverse Voltage
1. ANODE 1
2. ANODE 2
3. CATHODE
80
V
IF
Continuous Forward Current
Surge Current (10ms)
150
mA
A
2
1
IFSM
PD
2
Power Dissipation
200 *
150
mW
℃
Tj
Junction Temperature
ESM
Tstg
Storage Temperature Range
-55∼ 150
℃
Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
Marking
H 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
VF(3)
IR
TEST CONDITION
MIN.
TYP.
MAX.
-
UNIT
IF=1mA
-
-
-
-
-
-
0.60
IF=10mA
Forward Voltage
0.72
-
V
IF=150mA
VR=80V
-
-
-
-
1.25
0.5
3.0
4.0
Reverse Current
μA
pF
nS
CT
VR=0, f=1MHz
IF=10mA
Total Capacitance
Reverse Recovery Time
trr
2009. 1. 23
Revision No : 1
1/2
BAV70T
IF - VF
IR - VR
10 3
10
1
10 2
10
Ta=100 C
Ta=75 C
10-1
10-2
10-3
Ta=50 C
Ta=25 C
1
10-1
10-2
0
0
20
40
60
80
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
REVERSE VOLTAGE V (V)
R
t rr - I F
CT - VR
100
2.0
1.6
1.2
0.8
0.4
0
Ta=25 C
Fig. 1
f=1MHz
Ta=25 C
50
30
10
5
3
1
0.5
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
FORWARD CURRENT I (mA)
REVERSE VOLTAGE V (R)
R
F
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
INPUT
WAVEFORM
INPUT
DUT
WAVEFORM
0.01µF
OUTPUT
SAMPLING
OSCILLOSCOPE
0
I
=10mA
0
F
0.1 I
R
(R =50Ω)
IN
-6V
I
R
50ns
E
t
rr
PULSE GENERATOR
(R =50Ω)
OUT
2009. 1. 23
Revision No : 1
2/2
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