JCS1HN60TB-O-T-N-A [JSMC]
N-CHANNEL MOSFET;型号: | JCS1HN60TB-O-T-N-A |
厂家: | JILIN SINO-MICROELECTRONICS CO., LTD. |
描述: | N-CHANNEL MOSFET |
文件: | 总9页 (文件大小:505K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N沟道增强型场效应晶体管
R
N-CHANNEL MOSFET
JCS1HN60B
主要参数 MAIN CHARACTERISTICS
0.5 A
600 V
15 Ω
TO-92
ID
封装 Package
VDSS
Rdson(@Vgs=10V)
3.6 nC
Qg
APPLICATIONS
用途
高频开关电源
电子镇流器
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
产品特性
低栅极电荷
FEATURES
Low gate charge
Low Crss (typical 3.2pF )
Fast switching
低 Crss (典型值 3.2pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订 货 型 号
印
记
封
装
无卤素
包
装
器件重量
Order codes
Marking
Package Halogen Free Packaging Device Weight
JCS1HN60TB-O-T-N-A JCS1HN60TB TO-92
JCS1HN60TB-R-T-N-A JCS1HN60TB TO-92
否
NO
编带 Brede
编带 Brede
0.216 g(typ)
0.216 g(typ)
YES NO
版本:201607A
1/9
R
JCS1HN60B
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数
值
项
目
符
号
单
位
Value
Unit
Parameter
Symbol
JCS1HN60T
最高漏极-源极直流电压
VDSS
600
V
Drain-Source Voltage
0.5
A
A
连续漏极电流
ID T=25℃
T=100℃
Drain Current -continuous
0.31
最大脉冲漏极电流(注 1)
IDM
2.0
±30
47
A
V
Drain Current - pulse
(note 1)
最高栅源电压
VGSS
EAS
IAR
Gate-Source Voltage
单脉冲雪崩能量(注 2)
mJ
A
Single Pulsed Avalanche Energy(note 2)
雪崩电流(注 1)
1.0
Avalanche Current(note 1)
重复雪崩能量(注 1)
Repetitive Avalanche Current
(note 1)
EAR
3.0
mJ
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery dv/dt (note 3)
dv/dt
4.2
3.0
4.2
30
V/ns
W
PD
耗散功率
TC=25℃
-Derate
above 25℃
Power Dissipation
0.025
0.24
W/℃
℃
最高结温及存储温度
Operating and Storage Temperature TJ,TSTG
-55~+150
300
Range
引线最高焊接温度
Maximum Lead Temperature for Soldering TL
Purposes
℃
版本:201607A
2/9
R
JCS1HN60B
电特性 ELECTRICAL CHARACTERISTICS
项
目
符
号
测试条件
最小 典型最大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
600
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ
Breakdown Voltage Temperature
Coefficient
ID=1mA, referenced to 25℃
0.60
V/℃
TJ
VDS=600V,VGS=0V, TC=25℃
VDS=480V, TC=125℃
-
-
-
-
10 μA
100 μA
零栅压下漏极漏电流
IDSS
Zero Gate Voltage Drain Current
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
VDS=0V, VGS =-30V
-
-
-
-
100 nA
-100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
通态特性 On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
VGS =10V , ID=0.5A
-
-
11 15
正向跨导
0.6
-
Forward Transconductance
动态特性 Dynamic Characteristics
输入电容
VDS = 40V , ID=0.5(note 4)
VDS=25V,
VGS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
-
-
260 290 pF
22 28 pF
3.2 4.8 pF
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
版本:201607A
3/9
R
JCS1HN60B
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
td(on)
tr
VDD=300V,ID=1.0A,RG=25Ω
(note 4,5)
-
-
-
-
-
-
-
12 38
ns
46 102 ns
td(off)
tf
22 58
39 85
ns
ns
VDS =480V ,
Qg
3.6 4.2 nC
ID=1.0A
Qgs
Qgd
0.7
1.7
-
-
nC
nC
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
IS
-
-
-
-
-
-
1.0
4.0
1.0
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
ISM
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=1.0A
反向恢复时间
trr
-
-
185
-
-
ns
Reverse recovery time
反向恢复电荷
VGS=0V, IS=1.0A
dIF/dt=100A/μs (note 4)
Qrr
0.51
μC
Reverse recovery charge
热特性 THERMAL CHARACTERISTIC
最大
项
目
符
号
单
位
Max
Parameter
Symbol
Unit
JCS1HN60TB
结到管壳的热阻
Thermal Resistance, Junction to Case
结到环境的热阻
Rth(j-c)
-
℃/W
℃/W
Rth(j-A)
120
Thermal Resistance, Junction to Ambient
注释:
Notes:
1:脉冲宽度由最高结温限制
2:L=59mH, IAS=1.0A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
1 : Pulse width limited by maximum junction
temperature
2:L=59mH, IAS=1.0A, VDD=50V, RG=25 Ω, Starting
TJ=25℃
3:ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
3 : ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201607A
4/9
R
JCS1HN60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
8V
Top
7V
10
6.5V
6V
5.5V
Bottom 5V
1
150℃
1
25℃
Notes:
1. 250μs pulse test
2. TC=25℃
Notes:
0.1
1.250μs pulse test
2.VDS=40V
0.1
1
10
2
4
6
8
10
VDS [V]
VGS [V]
On-Resistance Variation vs.
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Drain Current and Gate Voltage
16
15
VGS=20V
14
1
13
VGS=10V
150℃
12
25℃
Note:Tj=25℃
11
10
0.0
0.1
0.5
1.0
1.5
2.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
ID [A]
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
VDS=480V
VDS=300V
10
8
VDS=120V
6
4
2
0
0
1
2
3
4
5
6
7
Qg T o l t a l G a t e C h a r g e [ n C ]
版本:201607A
5/9
R
JCS1HN60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Notes:
Notes:
1. VGS=0V
2. ID=250A
1. VGS=10V
2. ID=0.5A
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
Tj [℃]
Tj [ ℃]
Maximum Drain Current
vs. Case Temperature
Maximum Safe Operating Area
For JCS1HN60T
版本:201607A
6/9
R
JCS1HN60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS1HN60TB
1
0.5
0.2
Notes :
0.1
0.1
1. ZθJA(t)= r(t) * RθJA
2. Duty Factor, D=t1/t2
0.05
3. TJM – TA = PDM * ZθJA(t)
0.02
0.01
single pulse
0.01
10-2
10-1
100
101
102
103
104
105
t1 [ms]
版本:201607A
7/9
R
JCS1HN60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-92
单位 Unit:mm
版本:201607A
8/9
R
JCS1HN60B
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街 99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64678411
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街 99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64675588
64675688
电话: 86-432-64675588
64675688
64678411
64678411
Fax: 86-432-64671533
传真: 86-432-64671533
版本:201607A
9/9
相关型号:
©2020 ICPDF网 联系我们和版权申明