JCS18N50FH-R-F-N-B [JSMC]
N- CHANNEL MOSFET;型号: | JCS18N50FH-R-F-N-B |
厂家: | JILIN SINO-MICROELECTRONICS CO., LTD. |
描述: | N- CHANNEL MOSFET |
文件: | 总8页 (文件大小:1198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS18N50FH
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
18 A
VDSS
500 V
Rdson-max(@Vgs=10V) 0.27Ω
Qg-typ
50nC
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
用途
高频开关电源
电子镇流器
UPS 电源
产品特性
低栅极电荷
FEATURES
Low gate charge
Low Crss (typical 27pF )
Fast switching
低 Crss (典型值 27pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
无卤素
订 货 型 号
印
记
封
装
包
装
器件重量
Halogen
Free
Order codes
Marking
Package
Packaging Device Weight
JCS18N50FH-O-F-N-B
JCS18N50FH-R-F-N-B
JCS18N50FH TO-220MF
JCS18N50FH TO-220MF
否
是
NO
条管 Tube 2.20 g(typ)
条管 Tube 2.20 g(typ)
YES
版本:201510D
1/8
R
JCS18N50FH
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
项
目
符
号
数
值
单 位
Parameter
最高漏极-源极直流电压
Symbol
Value
Unit
VDSS
500
V
Drain-Source Voltage
18.0*
11.0*
A
A
连续漏极电流
ID T=25℃
T=100℃
Drain Current -continuous
最大脉冲漏极电流(注 1)
IDM
72*
±30
900
18.0
22.7
4.5
A
V
Drain Current -pulse (note 1)
最高栅源电压
VGSS
EAS
IAR
Gate-Source Voltage
单脉冲雪崩能量(注 2)
mJ
A
Single Pulsed Avalanche Energy(note 2)
雪崩电流(注 1)
Avalanche Current (note 1)
重复雪崩能量(注 1)
EAR
dv/dt
mJ
V/ns
Repetitive Avalanche Current (note 1)
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery dv/dt (note 3)
PD
39.0
W
耗散功率
TC=25℃
-Derate
above 25℃
Power Dissipation
0.31
W/℃
最高结温及存储温度
TJ,TSTG
-55~+150
℃
Operating and Storage Temperature Range
引线最高焊接温度
TL
300
℃
Maximum Lead Temperature for Soldering Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201510D
2/8
R
JCS18N50FH
电特性 ELECTRICAL CHARACTERISTIC
项
目
符
号
测试条件
最小 典型最 大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
500
-
-
-
Drain-Source Voltage
击穿电压温度特性
V
ΔBVDSS ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
0.5
-
-
V/℃
/ΔTJ
25℃
VDS=500V, VGS=0V, TC=25℃
VDS=400V, TC=125℃
-
-
1
零栅压下漏极漏电流
μA
IDSS
Zero Gate Voltage Drain Current
-
-
10 μA
正向栅极体漏电流
IGSSF
VDS=0V, VGS =30V
VDS=0V, VGS =-30V
-
-
100 nA
Gate-body leakage current, forward
反向栅极体漏电流
-
IGSSR
-100 nA
Gate-body leakage current, reverse
通态特性 On-Characteristics
阈值电压
VGS(th) VDS = VGS , ID=250μA
RDS(ON) VGS =10V , ID=9.0A
gfs
3.0
-
5.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
-
-
0.22 0.27
Static Drain-Source On-Resistance
正向跨导
24
-
Forward Transconductance
动态特性 Dynamic Characteristics
输入电容
VDS = 40V , ID=9.0A(note 4)
VDS=25V,
VGS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
-
-
2300 2920 pF
350 450 pF
27 43 pF
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
版本:201510D
3/8
R
JCS18N50FH
电特性 ELECTRICAL CHARACTERISTICS
项
目
符
号
测试条件
最小 典型 最大 单位
Parameter
Symbol
Tests conditions
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=250V,ID=18A,RG=25Ω
-
-
-
-
-
-
-
53 130 ns
169 350 ns
(note 4,5)
200 ns
td(off)
tf
97
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
85 195 ns
50 60 nC
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
VDS =400V ,
ID=18A
Qgs
Qgd
12.5
22
-
-
nC
nC
VGS =10V(note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
-
-
-
18
72
A
A
V
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
正向最大连续电流
Maximum Continuous Drain-Source VSD
Diode Forward Current
VGS=0V, IS=18A
1.4
反向恢复时间
trr
465
5.2
ns
Reverse recovery time
VGS=0V, IS=18A
dIF/dt=100A/μs (note 4)
反向恢复电荷
Qrr
μC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大值
项
目
符
号
单
位
Value
Parameter
Symbol
Rth(j-c)
Rth(j-A)
Unit
℃/W
℃/W
JCS18N50FH
结到管壳的热阻
3.20
Thermal Resistance, Junction to Case
结到环境的热阻
62.5
Thermal Resistance, Junction to Ambient
Notes:
注:
1:Pulse width limited by maximum junction temperature
2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
1:脉冲宽度由最高结温限制
2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,起始结温
TJ=25℃
3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
5:Essentially independent of operating temperature
3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
版本:201510D
4/8
R
JCS18N50FH
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
102
101
100
102
101
100
Top 15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
125℃
-55℃
Note:
1.VDS=40V
2.250μs Pulse Test
25℃
100
101
2
4
6
8
10 12
VDS Drain-Source Voltage[V]
VGS Gate-Source Voltage[V]
On-Resistance Variation vs
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Drain Current and Gate Voltage
0.5
0.4
0.3
0.2
0.1
0.0
101
VGS=10V
150℃
VGS=20V
25℃
Note:
1.VGS=0V
Note :Tj=25℃
2.250μs Pulse Test
100
0.2 0.3
0
2
4
6
8
10
12
14
16
18
20
22
0.4 0.5
0.6
0.7
0.8
0.9
1.0
1.1 1.2
1.3 1.4
VSD Source-Drain voltage[V]
ID [A]
Capacitance Characteristics
Capacitance Characteristics
12
VDS=400V
VDS=250V
10
8
VDS=100V
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
55
60
Qg Toltal Gate Charge [nC]
版本:201510D
5/8
R
JCS18N50FH
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
Notes
:
Notes:
1. VGS=10V
2. ID=9.0A
1. VGS=0V
2. ID=250A
-100
-75
-50
-25
0
25
50
75
100
125
150
-50
0
50
100
150
Tj [
℃]
Tj [℃ ]
Maximum Safe Operating Area
Maximum Drain Current vs. Case
Temperature
20
15
10
5
0
25
50
75
100
125
150
TC Case Temperature [
℃
]
Transient Thermal Response Curve
1 0 0
1 0 -1
1 0 -2
0 .5
0 .2
0 .1
N o te s :
0 .0 5
1
2
3
Z
(t)= 3 .2 0
℃
/W M a x
θ
J C
D u ty F a c to r , D = t /t
1
2
0 .0 2
0 .0 1
T
-T = P
c
*
Z
( t)
J M
D M
θ
J C
P D
M
s in g le p u ls e
t
1
t
2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
版本:201510D
6/8
R
JCS18N50FH
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
单位 Unit:mm
版本:201510D
7/8
R
JCS18N50FH
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街 99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64678411
总机:86-432-64678411
传真:86-432-64665812
网址:HTUwww.hwdz.com.cnUTH
Fax:86-432-64665812
Web Site:HTUwww.hwdz.com.cnUTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街 99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64675588
64675688
电话: 86-432-64675588
64675688
64678411-3098/3099
64678411-3098/3099
传真: 86-432-64671533
Fax: 86-432-64671533
版本:201510D
8/8
相关型号:
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