100R15W105KT4E [JOHANSON]
Tanceram® Chip Capacitors;型号: | 100R15W105KT4E |
厂家: | JOHANSON TECHNOLOGY INC. |
描述: | Tanceram® Chip Capacitors |
文件: | 总2页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
t
anceram®
cHIP
caPacItors
TANCERAM® chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because TANCERAM® capacitors exhibit
extremely low ESR, equivalent circuit performance can often be
achieved using considerably lower capacitance values. Low
DC leakage reduces current drain, extending the battery life of
portable products. TANCERAM® high DC breakdown voltage
ratings offer improved reliability and eliminate large voltage
de-rating common when designing with tantalums.
adVantageS
• Low ESR
• Low DC Leakage
• Higher Surge Voltage
• Reduced CHIP Size
• Non-polarized Devices
• Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
applicationS
• Switching Power Supply Smoothing (Input/Output)
• Backlighting Inverters
• DC/DC Converter Smoothing (Input/Output)
• General Digital Circuits
How to
o
rder tanceram®
Part number written: 100R15X106MV4E
100
R15
X
106
M
V
4
E
VOLTAGE
SIZE
DIELECTRIC
CAPACITANCE
TOLERANCE
TERMINATION
MARKING
PACKING
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
See Chart
W = X7R
X = X5R
1st two digits are
significant; third digit
denotes number of
zeros.
K = 10ꢀ
M = 20ꢀ
V = Nickel Barrier
with 100ꢀ Tin
Plating (Matte)
4 = Unmarked
Code
Type Reel
E
T
Plastic 7”
Paper 7”
Tape specifications
conform to EIA
RS481
T = SnPb*
(*available on
select parts)
105 = 1.00 µF
476 = 47.0 µF
107 = 100 µF
18
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DIELECTRIC
W
L
t
anceram®
cHIP
caPacItors
W (X7R)
X (X5R)
T
E/B
caSe
Size
capacitance
Selection
EIA / JDI
INCHES
(mm)
VDC 1.0 µF
2.2 µF
3.3 µF
4.7 µF
10 µF
22 µF
47 µF
100 µF
L
.040 .004
.020 .004
.025 Max.
.008 .004
(1.02 .10)
(0.51 .10)
(0.64)
16
10
6.3
25
16
10
0402
R07
W
T
EB
(0.20 .10)
L
W
T
EB
.063 .008
.032 .008
.035 Max.
.010 .005
(1.60 .20)
(0.81 .20)
(0.89)
0603
R14
(.25 .13)
6.3
50
L
W
.080 .010
.050 .010
.060 Max.
.020 .010
(2.03 .25)
(1.27 .25)
(1.52)
25
16
10
6.3
100
50
0805
R15
T
EB
(0.51 .25 )
L
W
T
.125 .013
.062 .010
.070 Max.
(3.17 .35)
(1.57 .25)
(1.78)
35
25
16
10
1206
R18
EB .020 +.015-0.01 (0.51+.38-.25)
6.3
100
50
35
25
L
W
T
.126 .016
.098 .012
.110 Max.
(3.20 .40)
(2.50 .30)
(2.8)
1210
S41
16
10
EB .020 +.015-.010 (0.51+.38-.25)
6.3
100
50
25
16
L
W
.177 .016
.126 .015
.140 Max.
.035 .020
(4.50 .40)
(3.20 .38)
(3.55)
1812
S43
T
EB
(0.89 0.51)
10
6.3
W
X
W
X
W
X
W
X
W
X
W
X
W
X
W
X
electrical
cHaracteriSticS
DIELECTRIC:
X7R
15% (-55 to +125°C)
X5R
15% (-55 to +85°C)
TEMPERATuRE COEFFICIENT:
DISSIPATION FACTOR:
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
100 ΩF or 10 GΩ, whichever is less
2.5 X WVDC, 25°C, 50mA max.
INSuLATION RESISTANCE (MIN. @ 25°C, WVDC)
DIELECTRIC STRENGTH:
Capacitance values ≤ 10 µF: 1.0kHz 50Hz @ 1.0 0.2 Vrms
Capacitance values > 10 µF: 120Hz 10Hz @ 0.5V 0.1 Vrms
TEST CONDITIONS:
OTHER:
See page 35 for additional dielectric specifications.
19
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