BFS25A_15 [JMNIC]
NPN 5 GHz wideband transistor;
| 型号： | BFS25A_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总11页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS25A
NPN 5 GHz wideband transistor
December 1997
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
FEATURES
PINNING
PIN
• Low current consumption
• Low noise figure
DESCRIPTION
Code: N6
• Gold metallization ensures
excellent reliability
3
1
2
3
base
emitter
• SOT323 envelope.
collector
DESCRIPTION
1
2
NPN transistor in a plastic SOT323
envelope.
MBC870
Top view
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
open base
−
−
8
V
−
−
−
−
5
V
−
6.5
32
200
−
mA
mW
Ptot
hFE
fT
up to Ts = 170 °C; note 1
−
IC = 0.5 mA; VCE = 1 V; Tj = 25 °C 50
80
5
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
3.5
GHz
dB
GUM
F
maximum unilateral power gain
noise figure
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
−
13
−
−
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
−
1.8
dB
Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
8
V
open base
5
V
open collector
2
V
6.5
32
150
175
mA
mW
°C
°C
Ptot
Tstg
Tj
up to Ts = 170 °C; note 1
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
December 1997
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
THERMAL RESISTANCE
thermal resistance from junction to
soldering point
up to Ts = 170 °C; note 1
190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN. TYP. MAX. UNIT
−
−
50
nA
hFE
Cre
fT
IC = 0.5 mA; VCE = 1 V
50
−
80
0.3
5
200
feedback capacitance
transition frequency
IC = 0; VCB = 1 V; f = 1 MHz
0.45 pF
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
3.5
−
−
−
−
GHz
GUM
F
maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
(note 1)
−
−
−
13
1.8
2
dB
dB
dB
Tamb = 25 °C
noise figure
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Γs = Γopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
December 1997
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
MRC037
MRC038 - 1
100
40
handbook, halfpage
handbook, halfpage
h
P
FE
tot
(mW)
80
60
40
20
0
30
20
10
0
−3
−2
−1
10
10
10
1
10
0
50
100
150
200
I
(mA)
o
( C)
C
T
s
VCE = 1 V; Tj = 25 °C.
Fig.2 Power derating curve.
Fig.3 DC current gain as a function of collector
current.
MRC032
MRC031
0.5
10
handbook, halfpage
handbook, halfpage
C
re
(pF)
f
T
V
= 3 V
1 V
(GHz)
CE
8
0.4
6
4
2
0
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
(mA)
0
1
2
3
4
5
(V)
V
I
CB
C
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
December 1997
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC036
20
handbook, halfpage
G
UM
(dB)
16
MRC035
25
handbook, halfpage
V
= 3 V
1 V
gain
(dB)
CE
G
UM
20
15
10
5
12
8
MSG
4
0
0
0.5
1
1.5
2
2.5
(mA)
I
C
0
0
0.5
1
1.5
2
2.5
(mA)
I
C
f = 1 GHz; Tamb = 25 °C.
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
Fig.7 Maximum unilateral power gain as a
function of collector current.
Fig.6 Gain as a function of collector current.
MRC034
MRC033
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
30
20
10
0
40
30
20
10
0
G
UM
G
UM
MSG
MSG
G
max
G
max
−2
−1
10
10
1
10
0.01
0.1
1
10
f (GHz)
f (GHz)
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
December 1997
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
MCD145
MCD146
4
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
I
= 2 mA
C
f = 2 GHz
3
3
2
1
0
1 GHz
500 MHz
1 mA
2
1
0.5 mA
0
10
−1
2
4
3
1
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 1 V; Tamb = 25 °C.
VCE = 1 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
pot. unst.
90°
region
1.0
1
0.8
135°
45°
2
0.5
0.6
0.4
stability
circle
0.2
MSG = 13.9 dB
5
0.2
Γ
5
OPT
0.2
12 dB
0.5
1
2
180°
0°
0
0
F = 2.5 dB
F = 4 dB
F
= 1.9 dB
10 dB
5
0.2
min
F = 6 dB
0.5
2
−45°
−135°
1
MRC075
1.0
−90°
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
December 1997
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
stability
circle
MSG = 11.1 dB
0.2
5
Γ
OPT
0.2
0.5
10 dB
1
2
5
180°
0°
0
F = 3 dB
F = 4 dB
F
= 2 dB
min
8 dB
5
0.2
F = 6 dB
0.5
2
−45°
−135°
1
MRA076
1.0
−90°
IC = 1 mA; VCE = 1 V;
f = 1 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
90°
G
= 7. 5 dB
max
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
7 dB
F
= 2.4 dB
min
0.2
5
Γ
OPT
F = 2.5 dB
2 5
0.2
0.5
5 dB
1
180°
0°
0
F = 4 dB
3 dB
5
0.2
F = 6 dB
0.5
2
−45°
−135°
1
MRC051
1.0
−90°
IC = 1 mA; VCE = 1 V;
f = 2 GHz; Zo = 50 Ω.
Fig.14 Noise circle.
7
December 1997
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
40 MHz
3 GHz
5
0.2
0.5
2
−45°
−135°
1
MRA052
1.0
−90°
IC = 1 mA; VCE = 1 V;
Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11).
90°
135°
45°
3 GHz
40 MHz
180°
0°
5
4
3
2
1
−135°
−45°
MRC053
−90°
IC = 1 mA; VCE = 1 V.
Fig.16 Common emitter forward transmission coefficient (S21).
December 1997
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
−135°
−45°
MRC054
−90°
IC = 1 mA; VCE = 1 V.
Fig.17 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
40 MHz
5
0.2
3 GHz
0.5
2
−45°
−135°
1
MRC055
1.0
−90°
IC = 1 mA; VCE = 1 V;
Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22).
December 1997
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
December 1997
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
11
相关型号：
©2020 ICPDF网 联系我们和版权申明