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2SC940 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC940
型号： 2SC940
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 放大器 局域网
文件： 总3页 (文件大小：48K)
中文：  中文翻译
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JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC940  
DESCRIPTION  
·With TO-3 package  
·High current capability  
·Wide area of safe operation  
APPLICATIONS  
·For B/W TV horizontal deflection application  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
200  
90  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
7
V
7.5  
A
ICM  
Collector current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
A
PT  
Tmb=25℃  
50  
W
℃
℃
Tj  
150  
-65~150  
Tstg  
JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC940  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
VCEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
90  
7
TYP. MAX UNIT  
Collector-emitter sustaining voltage IC=100mA ; IB=0  
V
V
Emitter-base breakdown voltage  
IE=1mA ; IC=0  
Collector-emitter saturation voltage IC=5A; IB=0.5A  
1.5  
0.1  
0.1  
70  
V
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCB=90V; IE=0  
VEB=5V; IC=0  
mA  
mA  
IEBO  
hFE  
IC=5A ; VCE=5V  
IC=0.5A ; VCE=10V  
15  
fT  
Transition frequency  
20  
MHz  
‹ hFE-2 Classifications  
O
Q
P
15-35  
25-45  
35-70  
2
JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC940  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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