2SC4769 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4769 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4769
DESCRIPTION
·
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built in damper diode
APPLICATIONS
·Ultrahigh-definition color display
·Horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
1500
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
800
V
V
Open collector
6
7
16
A
ICM
Collector current-peak
A
TC=25℃
60
W
W
℃
℃
PC
Collectorl power dissipation
3
Tj
Junction temperature
Storage temperature
150
-55~150
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4769
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IC=5A;IB=1.7 A
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
5
V
VBEsat
VCEO(SUS)
IEBO
Base-emitter saturation voltage
Collector-emitter sustaining voltage
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
IC=5A;IB=1.7 A
IC=100mA;IB=0
VEB=4V IC=0
1.5
V
800
40
V
130
10
1
mA
μA
mA
ICBO
VCB=800V IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
IEC=7A
ICES
hFE-1
hFE-2
VF
8
3
DC current gain
8
Diode forward voltage
2.0
V
Switching times
tstg Storage time
tf Fall time
3.0
0.2
μs
μs
IC=4A;RL=33.3Ω
IB1=0.8A;- IB2=1.6A
VCC=200V
0.1
ꢀ hFE-2 classifications
1
2
3
3-5
4-6
5-8
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4769
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic
相关型号：
©2020 ICPDF网 联系我们和版权申明