2SC4687_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC4687_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4687
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
500
400
7
Open base
V
Open collector
V
7
A
ICM
Collector current-peak
Base current
14
A
IB
3
A
Ta=25℃
TC=25℃
2.5
60
PC
Collector power dissipation
W
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4687
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
400
500
7
TYP.
MAX
UNIT
V
IC=5mA ; IB=0
IC=1mA ;IE=0
V
IE=1mA ;IC=0
V
IC=3A; IB=0.6A
IC=3A ;IB=0.6A
VCB=500V; IE=0
VEB=7V; IC=0
1.0
1.5
V
V
100
100
μA
μA
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=0.1A ; VCE=5V
IC=3A ; VCE=5V
IC=0.5A ; VCE=10V
15
8
hFE-2
DC current gain
fT
Transition frequency
30
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4687
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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