2SC4448_2015 [JMNIC]
Silicon Power Transistors;
| 型号： | 2SC4448_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon Power Transistors |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC4448
DESCRIPTION
·With TO-220F package
·High voltage ,high frequency
APPLICATIONS
·Chroma output applications for HDTV
·Video output applications for high
resolution display
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
emitter
3
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
250
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
250
5
V
V
Open collector
150
300
50
mA
mA
mA
W
ICM
IB
Collector current-peak
Base current
PC
Collector dissipation
Collector dissipation
Junction temperature
Storage temperature
Ta=25℃
TC=25℃
2
PC
10
W
Tj
150
-55~150
℃
Tstg
℃
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC4448
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=50mA IB=5mA
1.0
V
VBEsat
ICBO
IEBO
hFE-1
hFE-2
fT
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=50mA IB=5mA
VCB=200V IE=0
1.0
100
10
V
μA
μA
VEB=5V; IC=0
IC=10mA ; VCE=10V
IC=100mA ; VCE=10V
IC=40mA ; VCE=10V
f=1MHz;VCB=30V
40
20
200
DC current gain
Transition frequency
Collector output capacitance
240
3.3
MHz
pF
COB
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC4448
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:
±0.10 mm)
JMnic
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