2SC4157_2014 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC4157_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4157
DESCRIPTION
·With TO-3P(I) package
·High VCEO
·High speed switching
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
600
450
8
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current
Open base
V
Open collector
V
10
A
ICM
20
A
IB
5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-55~150
W
℃
℃
Tj
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
450
600
TYP.
MAX
UNIT
V
IC=10mA ,IB=0
IC=1mA ,IE=0
IC=5A; IB=1A
IC=5A; IB=1A
VCB=500V; IE=0
VEB=8V; IC=0
IC=5A ; VCE=5V
V
1.0
2.0
100
1.0
V
V
μA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
15
Switching times
Rise time
0.5
2.5
0.5
μs
μs
μs
tr
tstg
tf
V
CC≈200V
Storage time
Fall time
IB1=-IB2=0.5A ; RL=40Ω
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4157
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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