2SC3988 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC3988
型号: 2SC3988
厂家: QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SC3988  
DESCRIPTION  
·
·With TO-220Fa package  
·High breakdown voltage high reliability.  
·Wide ASO (Safe Operating Area)  
·Fast switching speed  
APPLICATIONS  
·500V/25A Switching Regulator Applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Fig.1 simplified outline (TO-3PN) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
800  
500  
7
UNIT  
V
Open base  
V
Open collector  
V
25  
A
ICP  
Collector current-peak  
Base current  
40  
A
IB  
8
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
150  
150  
-55~150  
W
Tj  
Tstg  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SC3988  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
IC=1mA ; IE=0  
MIN  
TYP.  
MAX  
UNIT  
VCBO  
Collector-base breakdown voltage  
800  
V
VCEO  
VEBO  
VCEX(SUS)  
VCEsat  
VBEsat  
ICBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter sustain voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
IC=5mA ;RBE=∞  
500  
7
V
V
IC=1mA ;IC=0  
IC=10A;IB1=-IB2=2A;  
L=200μH  
500  
V
IC=12A IB=2.4A  
1.0  
1.5  
10  
V
IC=12A IB=2.4A  
V
VCB=500V; IE=0  
VEB=5V; IC=0  
μA  
μA  
IEBO  
10  
hFE-1  
hFE-2  
Cob  
DC current gain  
IC=2.4A ; VCE=5V  
IC=12A ; VCE=5V  
IE=0 ; VCB=10V;f=1MHz  
IC=2.4A ; VCE=10V  
15  
8
50  
DC current gain  
Output capacitance  
260  
18  
pF  
fT  
Transition frequency  
MHz  
Switching times  
Turn-on time  
0.5  
3.0  
0.3  
μs  
μs  
μs  
ton  
tstg  
tf  
5IB1=-2.5IB2= IC=14A  
Storage time  
Fall time  
VCC200V;RL=14.3Ω  
hFE Classifications  
L
M
N
15-30  
20-40  
30-50  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SC3988  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)  
JMnic  

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