2SC3679 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3679 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3679
DESCRIPTION
·With TO-3PN package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
CONDITIONS
VALUE
900
800
7
UNIT
V
Open emitter
Open base
V
Open collector
V
5
A
ICM
10
A
IB
2.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-55~150
W
℃
℃
Tj
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3679
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
800
IC=2A; IB=0.4A
IC=2A ;IB=0.4A
VCB=800V ;IE=0
VEB=7V; IC=0
0.5
1.2
0.1
0.1
30
V
V
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=2A ; VCE=4V
IC=0.5A ; VCE=12V
f=1MHz;VCB=10V
10
fT
Transition frequency
6
MHz
pF
COB
Collector output capacitance
75
Switching times
ton
Turn-on time
1.0
5.0
1.0
μs
μs
μs
IC=2.0A
IB1=0.3A ,IB2=-1A
VCC=250V, RL=125Ω
ts
Storage time
Fall time
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3679
PACKAGE OUTLINE
Fig.2 outline dimentions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3679
4
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