2SC2579_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC2579_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2579
DESCRIPTION
·With TO-3PN package
·High power dissipation
·High current capability
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
160
160
6
UNIT
V
Open emitter
Open base
V
Open collector
V
8
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2579
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
CONDITIONS
MIN
160
160
6
TYP.
MAX
UNIT
V
IC=5mA; IE=0
IC=10mA ;RBE=∞
IE=5mA ; IC=0
V
V
VCB=160V; IE=0
VEB=6V; IC=0
0.1
0.1
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=3A ; VCE=4V
IC=5A ; IB=0.5A
IC=0.5A ; VCE=10V
50
VCE(sat)
Collector-emitter saturation voltage
Transition frequency
2.0
V
fT
20
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2579
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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