2SC1212A [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1212A |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SA743/743A
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SC1212
2SC1212A
2SC1212
2SC1212A
50
VCBO
Collector-base voltage
Open emitter
V
80
50
VCEO
Collector- emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
4
V
A
1
0.75
Ta=25℃
TC=25℃
PD
Total power dissipation
W
8
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55～+150
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
50
80
50
80
4
TYP.
MAX
UNIT
2SC1212
2SC1212A
2SC1212
2SC1212A
Collector-emitter
breakdown voltage
V(BR)CEO
IC=10mA ;RBE=∞
V
Collector-base
breakdown voltage
V(BR)CBO
IC=1mA ;IE=0
IE=1mA ;IC=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=1A ;IB=0.1A
1.5
1.0
5
Base-emitter voltage
Collector cut-off current
DC current gain
IC=50mA ; VCE=4V
VCB=50V; IE=0
V
ICBO
μA
hFE-1
hFE-2
fT
IC=50mA ; VCE=4V
IC=1A ; VCE=4V
60
20
200
DC current gain
Transition frequency
IC=30mA ; VCE=4V
160
MHz
hFE-1 Classifications
B
C
60-120
100-200
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
4
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