2SB869_15 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB869_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB869
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD961
·Low collector saturation voltage
·High collector current capability
APPLICATIONS
·For power switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
VALUE
-130
-80
UNIT
V
Open emitter
Open base
V
Open collector
-7
V
-5
A
ICM
-10
A
PC
TC=25℃
40
W
℃
℃
Tj
150
Tstg
-50~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SB869
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-10mA; IB=0
-80
IC=-4A; IB=-0.2A
IC=-4A; IB=-0.2A
VCB=-100V; IE=0
VEB=-5V; IC=0
-0.5
-1.5
-10
-50
V
V
μA
μA
IEBO
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
IC=-2A ; VCE=-2V
IC=-0.5A ; VCE=-10V
45
60
hFE-2
DC current gain
260
fT
Transition frequency
30
MHz
Switching times
ton
tstg
tf
Turn-on time
0.13
0.5
μs
μs
μs
IC=-2A ; IB1=-IB2=-0.2A
Storage time
Fall time
0.13
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB869
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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