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2SB859 [JMNIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2SB859
型号： 2SB859
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 放大器 局域网
文件： 总4页 (文件大小：79K)
中文：  中文翻译
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JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB859  
DESCRIPTION  
·With TO-220C package  
·Complement to type 2SD1135  
APPLICATIONS  
·Low frequency power amplifier  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Tc=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-100  
-80  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
-5  
V
-4  
A
ICP  
Collector current-Peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
-8  
A
PC  
TC=25℃  
40  
W
℃
℃
Tj  
150  
-45~150  
Tstg  
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB859  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)EBO  
VCEsat  
VBE  
PARAMETER  
Collector-emitter breakdown voltage  
Emitter-base breakdown votage  
Collector-emitter saturation voltage  
Base-emitter voltage  
CONDITIONS  
IC=-50mA; RBE=∞  
IE=-10μA; IC=0  
MIN  
-80  
-5  
TYP.  
MAX  
UNIT  
V
V
IC=-2 A;IB=-0.2 A  
IC=-1A ; VCE=-5V  
VCB=-80V; IE=0  
-2.0  
-1.5  
-0.1  
200  
V
V
ICBO  
Collector cut-off current  
DC current gain  
mA  
hFE-1  
IC=-1A ; VCE=-5V  
IC=-0.1A ; VCE=-5V  
IC=0; VCB=-20V;f=1MHz  
IC=-0.5A ; VCE=-5V  
60  
35  
hFE-2  
DC current gain  
Cob  
Collector output capacitance  
Transition frequency  
75  
20  
pF  
fT  
MHz  
‹ hFE-1 classifications  
B
C
60-120  
100-200  
2
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB859  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB859  
4

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