2SB849 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB849 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB849
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SD1110
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-7
UNIT
V
Open emitter
Open base
V
Open collector
V
-7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
Tstg
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SB849
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(BR)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-10mA ;IB=0
-120
IC=-5A ;IB=-0.5A
-2.0
-2.0
-50
-50
V
IC=-5A ;IB=-0.5A
V
VCB=-120V; IE=0
VEB=-6V; IC=0
μA
μA
IEBO
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V;f=1MHz
IC=-0.2A ; VCE=-5V
20
40
hFE -2
DC current gain
200
COB
Output capacitance
340
14
pF
fT
Transition frequency
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB849
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
相关型号：
©2020 ICPDF网 联系我们和版权申明