2SB697 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB697 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB697 2SB697K
DESCRIPTION
·With TO-3 package
·Complement to type 2SD733/733K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-160
-180
-140
-160
-6
UNIT
2SB697
2SB697K
2SB697
2SB697K
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
-12
ICM
PC
Tj
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-20
A
TC=25℃
100
W
℃
℃
150
Tstg
-40~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SB697 2SB697K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-140
-160
-160
-180
-6
TYP.
-1.0
15
MAX
UNIT
2SB697
2SB697K
2SB697
2SB697K
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-50mA ;IB=0
V
Collector-emitter
breakdown voltage
V(BR)CBO
IC=-5mA ;IE=0
IE=-5mA ;IC=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=-6A; IB=-0.6A
-2.5
-1.5
.1
-0.1
320
Base-emitter on voltage
Cor cut-off current
Emitter cut-off current
DC current gain
IC=-1A ; VCE=-5V
VCB=-80V; IE=0
VEB=-4V; IC=0
V
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
IC=-1A ; VCE=-5V
40
20
DC current gain
Transition frequency
MHz
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB697 2SB697K
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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