概述
数据手册2SB686 概述
Silicon PNP Power Transistors 硅PNP功率晶体管
2SB686 数据手册
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Product Specification
Silicon PNP Power Transistors
2SB686
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD716
APPLICATIONS
·Power amplifier applications
·Recommend for 30~35W high-fidelity
audio frequency amplifier output stage
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-100
-100
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-6
A
IE
Emitter current
6
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
60
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB686
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
-100
-5
TYP.
MAX
UNIT
V
IC=-50mA ,IB=0
IE=-10mA ,IC=0
V
IC=-4A; IB=-0.4A
IC=-4A ; VCE=-5V
VCB=-100V; IE=0
VEB=-5V; IC=0
-2.0
-1.5
-10
V
V
ICBO
Collector cut-off current
μA
μA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
IC=-1A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V ;f=1MHz
55
160
fT
Transition frequency
10
MHz
pF
Cob
Collector output capacitance
270
hFE Classifications
R
O
55-110
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB686
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB686
4
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