2SB557 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB557 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB557
DESCRIPTION
·With TO-3 package
·Complement to type 2SD427
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for 50W high-fidelity audio
frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-8
A
IE
Emitter current
8
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-65~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB557
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-120
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-0.1A ;IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IE=-10mA ;IC=0
V
IC=-5A; IB=-0.5A
IC=-5A ; VCE=-5V
VCB=-60V; IE=0
-2.5
-2.0
-0.1
-0.1
140
V
V
ICBO
mA
mA
IEBO
VEB=-5V; IC=0
hFE-1
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1.0MHz
IC=-1A ; VCE=-5V
40
20
hFE-2
DC current gain
COB
Output capacitance
280
7
pF
fT
Transition frequency
MHz
hFE-1 Classifications
R
O
40-80
70-140
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB557
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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