2SA877 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA877 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA877 2SA878
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-80
UNIT
2SA877
2SA878
2SA877
2SA878
VCBO
Collector-base voltage
Open emitter
V
-120
-80
VCEO
Collector-emitter voltage
Open base
V
-120
-6
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
-10
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
W
℃
℃
150
Tstg
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SA877 2SA878
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-80
-120
-6
TYP.
MAX
UNIT
2SA877
2SA878
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-0.1A ;IB=0
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
V
V
VCEsat
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
-2.0
-0.1
-0.1
2SA877
2SA878
VCB=-80V; IE=0
ICBO
Collector cut-off current
mA
mA
VCB=-120V; IE=0
VEB=-6V; IC=0
IEBO
hFE
COB
fT
Emitter cut-off current
DC current gain
IC=-3A ; VCE=-4V
IE=0 ; VCB=-10V; f=1.0MHz
IC=-1A ; VCE=-12V
50
Output capacitance
Transition frequency
255
15
pF
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA877 2SA878
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
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