2SA636 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA636 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
-70
UNIT
VCBO
V
2SA636
-45
VCEO
Collector-emitter voltage
Open base
V
2SA636A
-60
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
Open collector
-5
V
A
A
A
-3
-5
-0.6
10
TC=25℃
Ta=25℃
PT
Total power dissipation
W
1.2
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
-0.5
-0.8
MAX
-2.0
-2.0
-1
UNIT
V
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1.5A ;IB=-0.15A
VCB=-45V; IE=0
V
μA
μA
IEBO
VEB=-3V; IC=0
-1
hFE-1
hFE-2
COB
IC=-20mA ; VCE=-5V
IC=-0.5A ; VCE=-5V
IE=0; VCB=-10V;f=1MHz
IC=-0.1A ; VCB=-5V
20
40
DC current gain
250
Output capacitance
Transition frequency
60
45
pF
fT
MHz
hFE-2 classifications
N
M
L
K
40-60
50-100
80-160
120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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