2N6293 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6293 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6291 2N6293
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·For medium power switching and
amplifier applications such as:series
and shunt regulators and driver and
output stages of high-fidelity amplifiers
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6291
2N6293
2N6291
2N6293
60
VCBO
Collector-base voltage
Open emitter
Open base
V
80
50
VCEO
Collector-emitter voltage
V
70
VEBO
IC
Emitter-base voltage
Collector current
Open collector
5
V
A
7
3
IB
Base current
A
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
Rth j-c
3.125
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6291 2N6293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
50
TYP.
MAX
UNIT
2N6291
2N6293
2N6291
2N6293
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
70
IC=2.5A;IB=0.25A
IC=2A;IB=0.2A
IC=7A;IB=3A
Collector-emitter
saturation voltage
VCEsat-1
VCEsat-2
VBE-1
1.0
3.5
1.5
3.0
1.0
V
V
Collector-emitter saturation voltage
2N6291
Base-emitter on voltage
2N6293
IC=2.5A ; VCE=4V
IC=2A ; VCE=4V
IC=7A ; VCE=4V
VCE=40V; IB=0
V
VBE-2
Base-emitter on voltage
V
2N6291
Collector cut-off current
2N6293
ICEO
mA
V
CE=60V; IB=0
VCE=56V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=150℃
0.1
2.0
2N6291
Collector cut-off current
2N6293
ICEX
IEBO
hFE-1
mA
mA
VCE=75V; VBE=-1.5V
0.1
2.0
VCE=70V; BE=-1.5V,TC=150℃
Emitter cut-off current
VEB=5V; IC=0
1.0
2N6291
DC current gain
IC=2.5A ; VCE=4V
30
150
2N6293
IC=2A ; VCE=4V
hFE-2
COB
fT
DC current gain
IC=7A ; VCE=4V
2.3
Output capacitance
Transition frequency
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=4V;f=1MHz
250
pF
10
MHz
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6291 2N6293
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
相关型号：
2N6294LEADFREE
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
CENTRAL
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