首页 |元器件品牌

2N5295 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N5295
型号： 2N5295
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：47K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5293 2N5295 2N5297  
DESCRIPTION  
··With TO-220 package  
·High power dissipation  
APPLICATIONS  
·Power amplifier and medium speed  
switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5293  
2N5295  
2N5297  
2N5293  
2N5295  
2N5297  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
60  
80  
70  
VCEO  
Collector-emitter voltage  
Open base  
V
40  
60  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
7
V
A
4
2
IB  
Base current  
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
36  
W
℃
℃
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
3.47  
℃/W  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5293 2N5295 2N5297  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
2N5293  
CONDITIONS  
MIN  
70  
TYP.  
MAX  
UNIT  
Collector-emitter  
sustioning voltage  
VCEO(SUS)  
IC=0.1A ;IB=0  
V
2N5295  
40  
2N5297  
60  
2N5293  
IC=0.5A;IB=0.05A  
IC=1.0A;IB=0.1A  
IC=1.5A;IB=0.15A  
IC=0.5A ; VCE=4V  
IC=1.0A ; VCE=4V  
IC=1.5A ; VCE=4V  
Collector-emitter  
saturation voltage  
VCEsat  
1.0  
V
2N5295  
2N5297  
2N5293  
1.1  
1.3  
1.5  
VBE  
Base-emitter on voltage  
V
2N5295  
2N5297  
VCE=65V;VBE=1.5V  
TC=150℃  
0.5  
3.0  
2N5293/5297  
2N5295  
ICEV  
ICER  
IEBO  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
mA  
mA  
mA  
VCE=35V;VBE=1.5V  
2.0  
5.0  
TC=150℃  
VCE=50V;RBE=100Ω  
TC=150℃  
0.5  
2.0  
2N5293/5297  
2N5295  
VEB=7V; IC=0  
1.0  
2N5293/5297  
2N5293  
VEB=5V; IC=0  
IC=0.5A ; VCE=4V  
30  
120  
80  
hFE  
DC current gain  
Transition frequency  
Turn-on time  
2N5295  
IC=1.0A ; VCE=4V  
2N5297  
IC=1.5A ; VCE=4V  
20  
fT  
IC=0.2A ; VCE=4V  
0.8  
MHz  
2N5293  
2N5295  
2N5297  
2N5293  
2N5295  
2N5297  
IC=0.5A;IB=0.05A;VCC=30V  
IC=1.0A;IB=0.1A;VCC=30V  
IC=1.5A;IB=0.15A;VCC=30V  
IC=0.5A;IB=0.05A;VCC=30V  
IC=1.0A;IB=0.1A;VCC=30V  
IC=1.5A;IB=0.15A;VCC=30V  
ton  
5.0  
15  
μs  
toff  
Turn-off time  
μs  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5293 2N5295 2N5297  
PACKAGE OUTLINE  
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)  
JMnic  

相关型号：

2N5296

 NPN SILICON TRANSISTOR
CENTRAL

2N5296

 Silicon NPN Power Transistors
ISC

2N5296

 TO-220 - Power Transistors and Darlingtons
RECTRON

2N5296

 Silicon NPN Power Transistors
SAVANTIC

2N5296

 Silicon NPN Power Transistors
JMNIC

2N5296

 SI NPN POWER BJT
NJSEMI

2N5296

 Transistor
ASI

2N5297

 Silicon NPN Power Transistors
ISC

2N5297

 Silicon NPN Power Transistors
SAVANTIC

2N5297

 Silicon NPN Power Transistors
JMNIC

2N5297

 TRANSISTOR,BJT,NPN,70V V(BR)CEO,4A I(C),TO-220AB
DIGITRON

2N5298

 NPN SILICON TRANSISTOR
CENTRAL
©2020 ICPDF网 联系我们和版权申明