2N4899 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N4899 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N4898 2N4899 2N4900
DESCRIPTION
··With TO-66 package
·Low collector-emitter saturation voltage
·Excellent safe operating area
·2N4900 complement to type 2N4912
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
40
UNIT
2N4898
2N4899
2N4900
2N4898
2N4899
2N4900
VCBO
Collector-base voltage
Open emitter
V
60
80
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
1.0
4.0
1.0
25
Collector current-peak
Base current
A
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
150
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
7.0
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N4898 2N4899 2N4900
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N4898
2N4899
2N4900
Collector-emitter
sustaining voltage
VCEO(sus)
IC=0.1A ;IB=0
V
60
80
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N4898
IC=1A; IB=0.1A
IC=1A ;IB=0.1A
IC=1A ; VCE=1V
VCE=20V; IB=0
VCE=30V; IB=0
VCE=40V; IB=0
0.6
1.3
1.3
V
V
V
ICEO
Collector cut-off current
0.5
mA
2N4899
2N4900
VCE=Rated VCEO; VBE(off)=1.5V
TC=150℃
0.1
1.0
ICEX
ICBO
IEBO
hFE-1
hFE-2
hFE-3
COB
fT
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
mA
VCB=Rated VCBO; IE=0
VEB=5V; IC=0
0.1
1.0
IC=50mA ; VCE=1V
IC=500mA ; VCE=1V
IC=1.0A ; VCE=1V
40
20
10
DC current gain
100
100
DC current gain
Output capacitance
Transition frequency
IE=0;VCB=10V;f=1MHz
IC=250mA;VCE=10V
pF
3.0
MHz
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N4898 2N4899 2N4900
PACKAGE OUTLINE
Fig.2 outline dimensions
JMnic
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