DB120S [JINANJINGHENG]
Bilateral Voltage triggered Switch;
| 型号： | DB120S |
| 厂家： | 
JINAN JINGHENG (GROUP) CO.,LTD |
| 描述： | Bilateral Voltage triggered Switch |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R
SIDAC
Bilateral Voltage triggered Switch
Breakover Voltage:95-330Volts
S
E M I C O N D U C T O R
Mini-MELF(DO-213AA)
General Description
Inches (millimeters)
JJC' s SIDAC (Silicon Diode for Alternating Current)
represents an unique set of thyristor qualities. The SIDAC
is a bidirectional voltage triggered switch. Upon application
of a voltage exceeding the sidac breakover voltage point,
the sidac switches on through a negative resistance region
to a low on-state voltage. conduction will continue until the
current is interrupted or drops below the minimum holding
current of the device.
SOLDERABLE ENDS
1st BAND
0.067(1.7)
0.059(1.5)
At present, JINGHENG can offer three kinds of package in
DO-41,R-1，Mini-MELF,SMA,SOD-123FL
0.018(0.45)
JINGHENG's sidacs feature glass passivated junctions to ensure
a rugged and dependable device capable of withstanding
harsh environments.
0.010(0.25)
0.144(3.65)
0.136(3.45)
SOD-123FL
SMA(DO-214AC)
Features
0.039(1.00 )
0.020(0.50)
0.110(2.79)
0.077(1.95 )
0.054(1.38)
Bilateral Voltage triggered
AC circuit oriented
0.100(2.54)
0.065(1.65)
0.049(1.25)
Glass-passivated junctions
High surge current capabilities
0.114(2.90 )
0.098(2.50)
0.181(4.60)
0.157(3.99)
0.154(3.90)
0.138(3.50)
Applications
0.012(0.305)
0.006(0.152)
5°
0.010(0.25)
MAX
0.090(2.29)
0.078(1.98)
High voltage lamp ignitors
Xenon ignitors
0.052(1.33)
0.031(0.8)
0.008(0.203)
MAX
0.060(1.52)
0.030(0.76)
Natural gas ignitors
Over voltage protector
Gas oil ignitors
0.208(5.28)
0.189(4.80)
0.010(0.25)
MIN
High voltage power supply
Pulse generators
DO-41
R-1
Fluorescent lighting ignitors
HID (high intensity discharge) lighting ignitors
1.0(25.4)
MIN
1.0(25.4)
MIN.
0.107(2.7)
0.080(2.0)
DIA.
0.102(2.6)
0.091(2.3)
DIA.
0.205(5.20)
0.161(4.10)
0.140(3.5)
0.116(2.9)
1.0(25.4)
MIN
1.0(25.4)
MIN.
0.034(0.85)
0.026(0.65)
DIA.
0.025(0.65)
0.021(0.55)
DIA.
5-1
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP://WWW.JINGHENGGROUP.COM
R
Electrical Specifications
S
E M I C O N D U C T O R
PART NUMBER
I
DRM
IBO
I
T(RMS)
VDRM
VBO
On-state
RMS Current
≦
Repetitive
Peak
Off-state
Voltage
Repetitive Peak
Off-state Current
50/60hz Sine Wave
V=VDRM
Breakover
Current
50/60Hz
sine wave
Breakover voltage
50/60Hz sine wave
Tj 110 C
50/60Hz
Mini
SOD
Amps
Volts
Volts
Amps
Amps
SMA
DO-41
R-1
-MELF
-123FL
MAX
MIN
95
MIN
MAX
MAX
MAX
1.0
113
90
5
5
5
10
10
10
10
LL105
LL110
DB105A DB105R DB105S DB105K
DB110A DB110R DB110S DB110K
1.0
1.0
104
110
90
90
90
118
125
LL120
LL130
LL140
LL150
DB120A DB120R DB120S DB120K
DB130A DB130R DB130S DB130K
DB140A DB140R DB140S DB140K
DB150A DB150R DB150S DB150K
120
138
1.0
1.0
5
130
140
190
205
220
146
170
215
230
250
5
5
5
5
5
90
10
10
10
10
10
90
1.0
180
1.0
1.0
LL200
LL220
DB200A DB200R DB200S DB200K
DB220A DB220R DB220S DB220K
DB240A DB240R DB240S DB240K
180
190
1.0
1.0
LL240
LL250
LL300
DB250S DB250K
190
190
240
270
280
330
DB250A DB250R
5
5
10
10
DB300A DB300R DB300S DB300K
1.0
I
H
d
i
/dt
VTM
dv/dt
I
TSM
RS
Switching
Resistance
Critical
Peak One Cycle
Surge Current
50/60Hz Sine Wave
(Non-Repetitive)
Critical
Dynamic
Holding Current
50/60hz
Sine Wave
R=100 OHMS
Peak On-state Voltage
Rate-of-rise
Of Off-state
Voltage at
Rate VDRM
Rate-of-Rise
Of On-State
Current
(VBO-VS)
IT=1Amp
Rs
=
(IS-IBO)
50/60Hz
Sine Wave
Volts
MAX
Amps
Tj
100 C
≦
Volts/ second
mAmps
50Hz
Amps/ second
TYP
60Hz
K
Ω
MIN
MAX
MIN
0.1
0.1
0.1
0.1
TYP
40
1500
1500
1500
100
100
100
100
2.0
2.0
2.0
2.0
20
20
20
20
16.7
16.7
16.7
16.7
150
150
150
150
150
150
150
150
150
150
150
40
40
40
1500
1500
1500
1500
1500
1500
1500
1500
0.1
40
40
40
40
40
100
100
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
20
20
20
20
20
16.7
16.7
16.7
16.7
16.7
0.1
0.1
0.1
0.1
40
40
100
100
20
20
16.7
16.7
0.1
0.1
2.0
5-2
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP://WWW.JINGHENGGROUP.COM
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S
E M I C O N D U C T O R
Electrical Specifications
V-I Characteristics
FIG.1 Normalized DC Holding Current vs case/Lead
Temperature
+I
IT
IH
IS
RS
IBO
IDRM
-V
+V
VDRM
VT
VSVBO
Case Temperature(TC)
C
(VBO-VS)
(IS-IBO)
RS=
FIG.3 Normalized Repetitive Peak Breakover
Current vs Junction Temperature
-I
FIG.2 Peak surge current vs surge current duration
9
8
7
6
5
100
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum
Rated value at Special junction
temperature
4
V=VBO
40
30
20
3
2
10
8.0
6.0
4.0
1
BLOCKING CAPABILITY MAY BE LOST DURING
AND IMMEDIATELY FOLLOWING SURGE
CURRENT IMTERVAL
20
30
40
50
60
70
80
90
100
110
120
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED TO STEADY-STATE RATED
VALUE
Junction Temperature (TJ)-
C
2.0
1.0
1.0
10 100
Surge Current Duration- Full Cycles
1000
FIG.5 Normalized CBO Changes vs Case
Temperature
FIG.4 Repetitive Peak On-State Current (ITRM) vs
Pulse Width at Various Frequencies
di/dt Limit Line
+4
+2
600
400
200
ITRM
VBO Firing
Current
wavetorm
to
100
80
vt
0
-2
60
40
20
-4
10
8
-6
6
4
-8
2
1
-10
0.8
0.6
TJ=110 C Max
-12
-40
-20
0
+20 +25 +40
+60
+80
+100
+120
4
6
8
2
4
6
8
2
4
6
8
1
1X10-1
1X10-2
2X10-3
Junction Temperature(TJ)
C
Pulse base width (to)-mSec.
5-3
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP://WWW.JINGHENGGROUP.COM
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S
E M I C O N D U C T O R
Electrical Specifications
FIG.6 Ignitor Circuit (Low Voltage Input)
FIG.7 Typical High Pressure Sodium Lamp Firing
Circuit
4.7mF
BALLAST
BALLAST
4.7KW
10mF
0.47mF
400V
0.22mF
SIDAC
SIDAC
-
+
50V
SIDAC
LAMP
7.5KW
3.3KW
LAMP
+
4.7mF
100V
1.2mF
200V
-
24VAC
60Hz
120VAC
60Hz
220VAC
50Hz
16mH
H.V.
IGNITOR
120VAC
220VAC
FIG.8 Comparison of SIDAC vs SCR
FIG.9 Xenon Lamp Flashing Circuit
100
10
-
F
+
XENON LAMP
-
250V
20M
100-250
VAC
60Hz
4KV
120VAC
60Hz
100-250
VAC
60Hz
SIDAC
10 F
250V
SIDAC
+
-
0.1 F
400V
FIG.11 Basic SIDAC Circuit
FIG.10 Dynamic Holding Current Test Circuit for SIDAC
PUSH TO TEST
SWITCH TO TEST IN EACH
DIRECTIONS
S1
VBO
VBO
VBO
Ipk
DEVICE
UNDER
TEST
LOAD
100-250
VAC
60Hz
IH
TRACE STOPES
IH
IH
100-250
VAC
60Hz
125-145
100 1%
SCOPE
IH
CONDUCTION
ANGLE
LOAD CURRENT
5-4
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP://WWW.JINGHENGGROUP.COM
R
S
E M I C O N D U C T O R
Electrical Specifications
FIG.12 Relaxation Oscillator Using a SIDAC
(a) Circuit
(b) Waveforms
VBO
VC
R
SIDAC
t
VC
VDC(IN) VBO
IL
IL
RL
C
t
VIN-VBO
IBO
VIN-VTM
IH(MIN)
Rmax
Rmin
FIG.13 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements
INPUT
VOLTAGE
TW=3ms
(See Note A)
VCE MONITOR
0V
TW
(See Note B)
5V
100mH
100mS
COLLECTOR
CURRENT
2N6127
(or equivalent)
RBB1=150W
INPUT
TIP-47
0.63A
0
+
-
50W
50W
VCC=20V
RBB2=100W
SIDAC VBO
COLLECTOR
VOLTAGE
IC MONITOR
RS=0.1W
+
-
VBB2=0
VBB1=10V
10V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM=0.63A.
NOTE B: Sidac (or Diac or series of diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown
of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
5-5
JINAN JINGHENG ELECTRONICS CO., LTD.
HTTP://WWW.JINGHENGGROUP.COM
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