JX075H [JIEJIE]
Sensitive gate SCRs;型号: | JX075H |
厂家: | JIEJIE MICROELECTRONICS CO.,Ltd |
描述: | Sensitive gate SCRs |
文件: | 总6页 (文件大小:427K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JX075 Series Sensitive gate SCRs
Rev.2.0
DESCRIPTION:
2
The JX075 SCR series provide high dv/dt rate with
strong resistance to electromagnetic interface. They
are especially recommended for use on residual
current circuit breaker, straight hair, igniter etc.
JX075F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink.
1
1
3
2
3
TO-252
TO-251
1
2
3
1
TO-220B
Non-Insulated
TO-220F
Insulated
2
3
MAIN FEATURES
K(1)
G(3)
2
Symbol
VDRM/ VRRM
IT(RMS)
Value
1000
12
Unit
V
1
3
TO-263
A
A(2)
IGT
≤200
μA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
-40-150
-40-110
1000
Tj
VDRM
VRRM
1000
V
TO-251/ TO-252/
TO-220B(Non-Ins)
(TC=90℃)
TO-220F(Ins)
(TC=85℃)
RMS on-state current
IT(RMS)
12
A
TO-263 (TC=95℃)
Non repetitive surge peak on-state current
(tp=10ms)
ITSM
110
A
I2t value for fusing (tp=10ms)
I2t
45
50
A2s
A/μs
A
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110℃)
dI/dt
IGM
1.2
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JX075 Series
JieJie Microelectronics CO. , Ltd
Peak gate power (tp=20μs, Tj=110℃)
PGM
3
W
W
Average gate power dissipation(Tj=110℃)
PG(AV)
0.2
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
IGT
VGT
VGD
IL
-
-
60
-
200
μA
V
VD=12V RL=33Ω
0.8
-
VD=VDRM Tj=110℃
0.1
-
-
V
-
5
mA
mA
V/μs
IG=1.2 IGT
IH
-
-
6
IT=0.05A
dV/dt
VD=2/3VDRM Tj=110℃ RGK=1KΩ
5
-
-
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=24A tp=380μs
Tj=25℃
1.6
10
2
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=110℃
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
TO-251/ TO-252/
TO-220F(Ins)
2.2
Rth(j-c)
junction to case
℃/W
TO-220B(Non-Ins)
TO-263
2.0
1.9
ORDERING INFORMATION
J X 075 H
E:TO-263
JieJie Microelectronics Co.,Ltd
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
H:TO-251 K:TO-252
Sensitive gate SCRs
IT(RMS):12A
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JX075 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.90
0.55
5.10
0.76
0.45
0.48
6.00
6.40
Max.
2.40
1.20
0.65
5.40
0.85
0.62
0.62
6.20
6.70
Min.
0.086
0.035
0.022
0.200
0.030
0.018
0.019
0.236
0.252
Max.
0.095
0.047
0.026
0.213
0.033
0.024
0.024
0.244
0.264
A
A2
B
E
B2
A
C2
B2
B3
C
C2
D
B3
B
E
2.30
0.091
G
16.0
8.90
1.80
1.37
17.0
9.40
1.90
1.50
H
0.630
0.350
0.071
0.054
0.669
0.370
0.075
0.059
L
G
C
L1
L2
V1
A2
4°
4°
TO-251
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.03
0.55
5.10
0.45
0.48
6.00
6.40
4.40
9.35
1.30
1.37
Max.
Min.
0.086
0.001
0.022
0.200
0.018
0.019
0.236
0.252
0.173
0.368
0.051
0.054
Max.
0.095
0.009
0.026
0.213
0.024
0.024
0.244
0.264
0.185
0.417
0.067
0.059
2.40
0.23
0.65
5.40
0.62
0.62
6.20
6.70
4.70
10.6
1.70
1.50
A
A2
B
E
A
B2
C2
B2
C
C2
D
E
B
C
G
G
H
A2
L1
L2
V1
V2
4°
4°
0°
8°
0°
8°
TO-252
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JX075 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
A
B
E
A
C2
C
C2
C3
D
E
JIE
C3
C
F
L2
B
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220B Non-Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
Max.
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
Max.
.5mm
Max 3
A
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
0.189
A
B
E
C2
Φ
0.80
0.031 0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.1
C
C2
C3
D
E
C3
F
L2
B
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
C
G
3.30
45°
TO-220F Ins
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JX075 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
15
P(w)
18
α=180°
TO-220B(Non-Ins)/
TO-251/ TO-252
15
12
9
/
12
TO-263
8
TO-220F(Ins)
6
4
3
IT(RMS) (A)
Tc (℃)
0
0
0
3
6
9
12
15
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM(A)
ITSM (A)
200
120
90
60
30
0
tp=10ms
One cycle
100
10
1
Tj=Tjmax
Tj=25℃
Number of cycles
10 100
VTM(V)
3.0
0
1.0
2.0
4.0
5.0
1
1000
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JX075 Series
JieJie Microelectronics CO. , Ltd
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t (dI/dt < 50A/μs)
ITSM (A), I2t (A2s)
3000
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
2.5
1000
IH&IL
2.0
IGT
ITSM
1.5
1.0
dI/dt
100
I2t
0.5
Tj (℃)
tp(ms)
10
0.01
0.0
-40
0
40
80
120
0.1
1
10
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 26-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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