JX007 [JIEJIE]
0.8A Sensitive SCRs;
| 型号： | JX007 |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 0.8A Sensitive SCRs |
| 文件： | 总4页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JX007 Series
0.8A Sensitive SCRs
Rev.2.0
DESCRIPTION:
The JX007 SCR series provide high dv/dt rate
with strong resistance to electromagnetic interface.
They are especially recommended for use on
residual current circuit breaker, straight hair, igniter
etc.
2
1
3
1
3
2
TO-92
SOT-23-3L
MAIN FEATURES
Symbol
Value
0.8
Unit
A
K(1)
A(2)
IT(RMS)
G(3)
IGT
≤200
600
μA
V
VDRM /VRRM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
-40-150
-40-110
600
Tj
VDRM
VRRM
600
V
TO-92/ SOT-23-3L
(TC=60℃)
Non repetitive surge peak on-state current
(tp=10ms)
RMS on-state current
IT(RMS)
0.8
8
A
ITSM
A
I2t value for fusing (tp=10ms)
I2t
dI/dt
IGM
0.32
50
A2s
A/μs
A
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110℃)
Peak gate power (tp=20μs, Tj=110℃)
Average gate power dissipation(Tj=110℃)
0.2
0.5
0.1
PGM
PG(AV)
W
W
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JX007 Series
JieJie Microelectronics CO. , Ltd
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
IGT
VGT
VGD
IL
-
-
30
200
μA
V
VD=12V RL=33Ω
0.6
0.8
-
VD=VDRM Tj=110℃
0.2
-
-
-
-
-
V
5
mA
mA
V/μs
IG=1.2 IGT
IH
-
3
IT=0.05A
dV/dt
VD=2/3VDRM Tj=110℃ RGK=1KΩ
10
-
STATIC CHARACTERISTICS
Symbol
Parameter
Tj=25℃
Value(MAX)
Unit
V
VTM
IDRM
IRRM
IT=1A tp=380μs
1.5
5
Tj=25℃
μA
μA
VD=VDRM VR=VRRM
Tj=110℃
100
THERMAL RESISTANCES
Symbol
Parameter
TO-92/ SOT-23-3L
Value
Unit
Rth(j-c)
junction to case
75
℃/W
ORDERING INFORMATION
J X 007 U
JieJie Microelectronics Co.,Ltd
U:TO-92 L:SOT-23-3L
Sensitive gate SCRs
IT(RMS):0.8A
TEL：+86-513-83639777
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JX007 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
N
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.45
4.32
3.18
0.407
0.60
-
Max.
5.20
5.33
4.19
Min.
0.175
0.170
0.125
Max.
0.205
0.210
0.165
0.021
0.031
-
V
A
A
B
C
D
E
F
0.533 0.016
0.80
-
0.024
1.1
-
-
0.043
0.050
0.091
E
-
1.27
2.30
-
-
G
H
J
-
-
-
-
0.36
12.70
2.04
1.86
-
0.50
15.0
2.66
2.06
4.3
0.014
0.500
0.080
0.073
-
0.020
0.591
0.105
0.081
0.169
K
N
P
V
D
J
G
TO-92
Dimensions
Inches
G
Ref.
Millimeters
Typ.
Typ.
Min.
2.65
Max. Min.
2.95 0.104
Max.
0.116
A
B
C
D
E
F
2.92
1.90
0.115
0.075
0.34
0.25
0.36 0.013
0.55 0.010
0.014
0.022
1.60
1.17
0.15
0.063
0.046
0.006
D
C
B
F
G
H
SOT-23-3L
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
1.2
P(w)
1.2
α=180°
1.0
1.0
TO-92/
SOT-23-3L
0.8
0.6
0.8
0.6
0.4
0.2
0
0.4
0.2
0
IT(RMS) (A)
Tc (℃)
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
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JX007 Series
JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
8
tp=10ms
One cycle
8
6
4
Tj=Tjmax
1
Tj=25℃
2
0
VTM (V)
Number of cycles
100
0.1
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
100
2.5
2.0
ITSM
10
IGT
1.5
1.0
0.5
0.0
IH&IL
1
I2t
Tj(℃)
tp(ms)
0.1
0.01
-40
0
40
80
120
0.1
1
10
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 18-Nov.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL：+86-513-83639777
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