KTC3192R [JCST]
Transistor;
| 型号： | KTC3192R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
KTC3192 TRANSISTOR(NPN)
FEATURE
1.EMITTER
2. COLLECTOR
3. BASE
High Power Gain: Gpe=29dB(Typ)(f=10.7MHZ)
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
4
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
50
mA
mW
℃
PC
625
150
-55-150
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
35
30
4
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 100μA, IE=0
IC= 1mA , IB=0
V
IE= 100μA, IC=0
V
VCB= 35V , IE=0
VEB= 4V , IC=0
VCE=12 V, IC= 2mA
IC= 10mA, IB= 1mA
IC= 10mA, IB= 1mA
0.1
1.0
240
0.4
1.0
400
3.2
μA
μA
Emitter cut-off current
IEBO
DC current gain
hFE
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
V
CE= 10 V, IC= 1mA
100
1.4
MHz
pF
Collector output capacitance
VCB=10 V,IE=0,f=1MHZ
Cob
VCE=10V,IC=1mA,
f=30MHZ
Collector-base time constant
Power gain
10
27
50
33
pS
dB
Cc.rbb’
Gpe
VCC=6V,IC=1mA,
f=10.7MHZ
CLASSIFICATION OF hFE
Rank
R
O
Y
Range
40-80
70-140
120-240
A,June,2011
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