3DD13005L3DB2 [JCST]
Transistor;
| 型号： | 3DD13005L3DB2 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：886K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13005L3D TRANSISTOR (NPN)
TO-126
FEATURES
z
z
z
z
Power switching applications
1. BASE
Good high temperature
Low saturation voltage
High speed switching
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
350
Unit
V
200
V
CIRCUIT:
9
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
9
A
PC
1.25
150
W
Tj
℃
℃
Tstg
Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
Min
350
200
9
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
VCB=350V,IE=0
VCE=200V,IB=0
VEB=9V,IC=0
100
100
100
40
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
VCE=5V, IC=1A
VCE=5V, IC=5mA
VCE=5V, IC=2A
VCE=5V, IC=4A
IC=1A,IB=0.2A
IC=2A,IB=0.4A
IC=4A,IB=1A
10
10
10
10
hFE(2)
DC current gain
hFE(3)
hFE(4)
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
VECF
0.8
0.8
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
IC=1A,IB=0.25A
IC=2A,IB=0.5A
IC=2A
1.2
1.2
1.5
5
V
V
Emitter-Collector forward voltage
Storage time
V
IC=250mA (UI9600)
VCE=10V, IC=0.5A
2.5
5
µs
MHz
tS
fT
Transition frequency
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
C1
35-40
CLASSIFICATION OF tS
Rank
A
B1
3-3.5(µs )
B2
C2
Range
2.5-3(µs )
3.5-4 (µs )
4-4.5 (µs )
4.5-5 (µs )
A,Dec,2010
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