概述
规格参数
数据手册2SC4738GR 概述
Transistor
2SC4738GR 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.59 |
| Is Samacsys： | N | 最大集电极电流 (IC)： | 0.15 A |
| 配置： | Single | 最小直流电流增益 (hFE)： | 200 |
| 最高工作温度： | 150 °C | 极性/信道类型： | NPN |
| 最大功率耗散 (Abs)： | 0.1 W | 子类别： | Other Transistors |
| 表面贴装： | YES | 标称过渡频率 (fT)： | 80 MHz |
| Base Number Matches： | 1 |
2SC4738GR 数据手册
通过下载2SC4738GR数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4738 TRANSISTOR (NPN)
FEATURES
SOT–523
High Voltage and Current
High DC Current Gain
Complementary to 2SA1832
Small Package
APPLICATIONS
1. BASE
General Purpose Amplification
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
60
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
50
5
Collector Current
150
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
100
PC
RΘJA
Tj
1250
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
60
50
5
Typ
Max
Unit
V
V(BR)CBO IC=100µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100µA, IC=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
IEBO
hFE
VCB=60V, IE=0
100
100
700
0.25
nA
nA
VEB=5V, IC=0
Emitter cut-off current
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V,IC=1mA
VCB=10V, IE=0, f=1MHz
120
80
DC current gain
VCE(sat)
fT
V
Collector-emitter saturation voltage
Transition frequency
MHz
pF
Cob
3.5
Collector output capacitance
CLASSIFICATION OF hFE
RANK
Y
120–240
LY
GR
BL
RANGE
200–400
LG
350–700
MARKING
LL
A,Oct,2010
Typical Characterisitics
2SC4738-CAN
hFE —— IC
Static Characteristic
8
1000
COMMON
EMITTER
Ta=25℃
Ta=100℃
20uA
18uA
6
4
2
0
300
100
Ta=25℃
16uA
14uA
12uA
10uA
8uA
6uA
4uA
IB=2uA
30
10
COMMON EMITTER
VCE=6V
0.3
3
0.1
1
10
30
100 150
0
2
4
6
8
10
12
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC
VBEsat ——
VCEsat —— IC
1.2
0.8
0.4
0.0
300
100
β=10
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
30
10
150
3
30
150
100
0.1
0.3
1
3
10
100
0.1
1
10
30
0.3
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob/ Cib ——
VCB/ VEB
20
10
150
100
f=1MHz
IE=0/IC=0
COMMON EMITTER
VCE=6V
Ta=25℃
Cib
30
10
Ta=100℃
3
1
Cob
Ta=25℃
3
0.3
0.1
1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE VBE (V)
PC ——
Ta
125
100
75
50
25
0
0
25
50
75
100
125
150
A,Oct,2010
AMBIENT TEMPERATURE Ta (℃)
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