F1G [JFW]
SURFACE MOUNT FAST RECOVERY RECTIFIER; 表面装载快速恢复整流
| 型号： | F1G |
| 厂家： | 
JFW INDUSTRIES, INC. |
| 描述： | SURFACE MOUNT FAST RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R
F1A~F1M
F
A
S
T
R
E
C
O
V
E
R
Y
R
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C
T
I
F
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u
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f
a
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M ou nt
S
E
M
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T O R
R
e
v
e
r
s
e
V
o
l
t
a
g
e
-
5
0
t
o
1
0
0
0
V
o
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t
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F
o
r
w
a
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C
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-
1
.
0
A
m
p
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r
e
FEATURES
●
●
●
●
●
●
●
Low profile space
Ideal for automated placement
Glass passivated chip junctions
Low forward voltage drop
Low leakage current
High forward surge capability
High temperature soldering：
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
●
M
E
C
H
A
N
I
C
A
L
D
A
T
A
●
Case: JEDEC SOD-123FL molded plastic
body over glass passivated chip
●
●
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
M
A
X
I
M
U
M
R
A
T
I
N
G
S
A
N
D
E
L
E
C
T
R
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
(TA = 25 °C unless otherwise noted)
Symbol F1A
F
F1D
F1G
F1J
F
1K
F1M UNIT
1B
VRRM
50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
400
280
400
1
600
420
600
800
560
800
1000
V
V
V
A
VRMS
35
700
VDC
50
Maximum DC blocking voltage
100
1000
IF(AV)
IFSM
VF
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
25
A
V
Maximum instantaneous forwad voltage at 1.0A
1.3
Maximum DC reverse current
TA = 25 ℃
TA = 100℃
5.0
50
IR
μA
at Rated DC blocking voltage
Maximum reverse recovery time
at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A
trr
CJ
150
500
250
nS
p F
℃
Typical junction capacitance at 4.0 V ,1MHz
15
Operating junction and storage
temperature range
TJ, TSTG
–55 to +150
J
I
N
A
N
J
I
N
G
H
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N
G
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L
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S
C
O
.
,
L
T
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.
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G
S
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D
C
H
A
R
A
C
T
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R
I
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T
I
C
C
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V
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S
F 1A~F 1M
F IG .1- TY P IC AL FO R WA RD CU RR ENT
DE RA TIN G C UR VE
F IG . 2 -M AX IM UM NON - REP ETIT IVE
F ORW AR D SU RG E CUR RE NT
1.0
0.8
0.6
50
8.3m s SIN GLE H ALF SIN E- WAVE
( J ED EC M ethod)
40
30
20
10
0
0.4
SIN GIE PH ASE H AIF WAVE 60H Z
R ESIST IVE OR IN D U C T IVE LOAD
0.2
0
0
25
50
75
100
125
150
175
A
M
B
I
E
N
T
T
E
M
P
E
R
A
T
U
R
E
(
°
C
)
1
2
4
6
8
10
20
40
60
100
NU M BER O F CYC LES AT 60Hz
F IG .3- TY P IC AL INS TANTA NE O US FOR WAR D
C HAR ACT E RI ST ICS
F
I
G
.
4
-
T
Y
P
I
C
A
L
R
E
V
E
R
S
E
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
10
6.0
4.0
20
10
2.0
3
1
1.0
0.6
0.4
TJ =25 C
0.2
0.3
0.1
0.06
0.04
0.1
TJ=25°C
Pul s e W i dth=300µ s
1% D uty C y c l e
0.02
0.01
0.03
0
20
40
60
80
100
120
140
0.01
0.4 0.6
0.8
1.0
1.2
1.4
1.6
1.8
P
E
R
C
E
N
T
O
F
R
A
T
E
D
P
E
A
K
R
E
V
E
R
S
E
V
O
L
T
A
G
E
(
%
)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
O
L
T
S
)
F IG . 6 -T ES T CI RCUI T DI AG RA M AN D R EV ER S E
RE COVERY T IM E CHA RA CTER IS TI C
F
I
G
.
5
-
T
Y
P
I
C
A
L
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
5
0
W
1
0
W
2 0 0
1 0 0
N
O
N
I
N
D
U
C
T
I
V
E
N
O
N
I
N
D
U
C
T
I
V
E
t
r
r
+0.5A
6 0
4 0
D
.
U
.
T
.
(
＋
)
PU LSE
G ENERAT O R
(NO T E2 )
0
5
0
V
d
c
2
0
-0.25A
-1.0A
(
A
D
J
U
S
T
A
B
L
E
)
(
－
)
1
OSC ILLOSC OPE
( N OT E1)
N
O
N
I
N
-
T
J
=
2
5
°
C
D
U
C
T
I
V
E
1
0
N O TE S: 1. R i s e T i m e =7n s m a x. i n p u t l m p e d an ce =1
m e go hm 2 2p F
1cm
SE T T IM E BA SE F OR 5 0/ 1 00 ns/ cm
2 .R i s e T i me = 10n s m a x. s ou rc e l m pe d a nc e
=5 0 ohm s
0
0.1 0.2
0.4
1
2
4
10
20
40
100
R
E
V
E
R
S
E
V
O
L
T
A
G
E
.
(
V
)
J
I
N
A
N
J
I
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G
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.
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D
.
E-mail:lg0817@qq.com
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