SS8050L(SOT-23) [JCST]
Transistor;
| 型号： | SS8050L(SOT-23) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
SS8050
TRANSISTOR (NPN)
1. BASE
FEATURES
2. EMITTER
Complimentary to SS8550
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
25
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1.5
A
PC
0.3
W
℃
℃
Tj
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE=100μA, IC=0
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
VCB=40V, IE=0
0.1
0.1
0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
hFE(1)
VCE=1V, IC= 100mA
VCE=1V, IC= 800mA
IC=800mA, IB= 80mA
IC=800mA, IB= 80mA
120
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.2
V
V
V
CE=10V, IC= 50mA
Transition frequency
fT
100
MHz
f=30MHz
CLASSIFICATION OF hFE
(1)
Rank
L
H
J
120-200
200-350
300-400
Range
A,Apr,2011
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