MJD42CT4(TO-251) [JCST]
Transistor;
| 型号： | MJD42CT4(TO-251) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
TO-251
TO-252-2L
MJD42C TRANSISTOR (PNP)
FEATURES
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Designed for general purpose amplifier and low speed
1.BASE
switching applications.
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Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Monolithic Construction With Built–in Base–Emitter Resistors
2.COLLECTOR
3.EMITTER
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MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-100
-100
-5
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-6
A
PC
1.25
150
W
℃
℃
TJ
Tstg
Storage Temperature
-65-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
-100
-100
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100μA,IE=0
V(BR)CEO IC=-30mA,IB=0
V(BR)EBO IE=-100μA,IC=0
V
V
ICEO
IEBO
VCB=-60V,IE=0
-50
μA
mA
Emitter cut-off current
VEB=-5V IC=0
-0.5
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=-4V IC=-0.3A
VCE=-4V,IC=-3A
30
15
DC current gain
75
-1.5
-2
Collector-emitter saturation voltage
Base-emitter voltage
IC=-6A,IB=-0.6A
V
V
VCE=-4V,IC=-6A
Transition frequency
fT
VCE=-10V,IC=-500mA,f=1MHz
3
MHz
Typical Characteristics
MJD42C
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