KSC5019N [JCST]
Transistor;
| 型号： | KSC5019N |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KSC5019 TRANSISTOR (NPN)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
z
Low VCE(sat)
General Purpose Amplifier Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
30
10
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
750
166
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
30
10
6
Typ
Max
Unit
V
Collector-base breakdown voltage
IC= 0.1mA,IE=0
IC=10mA,IB=0
Collector-emitter
breakdown
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IE=1mA,IC=0
V
VCB=30V,IE=0
0.1
0.1
600
μA
μA
IEBO
VEB=6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V, IC=500mA
VCE=1V, IC=2A
140
70
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IC=2A,IB=50mA
VCE=1V, IC=500mA
VCB=10V,IE=0, f=1MHz
VCE=1V,IC= 500mA
0.5
1.5
V
V
27
pF
Collector output capacitance
Transition frequency
Cob
fT
150
MHz
CLASSIFICATION OF hFE(1)
RANK
L
M
N
P
RANGE
140-240
200-330
300-450
420-600
A,Dec,2010
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