KSB811G [JCST]
Transistor;
| 型号： | KSB811G |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 放大器 晶体管 |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
KSB811 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
Complement to KSD1021
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-30
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current
-1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
350
mW
℃/W
℃
RθJA
Tj
357
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-30
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -0.1mA,IE=0
IC=-10mA,IB=0
V
IE=-0.1mA,IC=0
VCB=-30V,IE=0
V
-0.1
-0.1
400
-0.5
-1.2
μA
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE
VCE=-1V, IC=-0.1A
IC=-1A,IB=-0.1A
IC=-1A,IB=-0.1A
VCB=-6V,IE=0, f=1MHz
VCE=-6V,IC=-10mA
70
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
VBE (sat)
Cob
V
V
18
pF
fT
110
MHz
CLASSIFICATION OF hFE
RANK
O
Y
G
RANGE
70-140
120-240
200-400
A,Dec,2010
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