D882GR(SOT-89-3L) [JCST]
Transistor,;
| 型号： | D882GR(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor, |
| 文件： | 总1页 (文件大小：690K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
D882 TRANSISTOR (NPN)
SOT-89-3L
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
30
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
A
PC
0.5
W
℃
℃
TJ
150
-55~150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC = 100μA, IE=0
IC = 10mA, IB=0
IE= 100μA, IC=0
VCB= 40V, IE=0
VCE= 30V, IB=0
VEB= 6V, IC=0
Min
40
30
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
1
10
1
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
VCE=2V, IC= 1A
VCE=2V, IC= 100mA
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
60
32
400
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.5
V
V
V
CE= 5V , Ic=0.1A
Transition frequency
fT
50
MHz
f =10MHz
CLASSIFICATION OF hFE(1)
R
O
Y
GR
200-400
Rank
60-120
100-200
160-320
Range
A,Jun,2011
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