BAV199DW [JCST]
Multi-Chip DIODES; 多芯片二极管
| 型号： | BAV199DW |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Multi-Chip DIODES |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV199DW Multi-Chip DIODES
SOT-363
FEATURES
Power dissipation
PCM: 0.2
W (Tamb=25℃)
Collector current
IF
Collector-base voltage
VR : 85
:
200
mA
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
MARKING:K52
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR) R
IR
Test
conditions
MIN
TYP
MAX
UNIT
V
Reverse breakdown voltage
Reverse voltage leakage current
IR= 100µA
VR=75V
85
5
nA
IF=1mA
0.9
1.0
1.1
IF=10mA
IF=50mA
IF=150mA
Forward voltage
V
VF
Cj
trr
1.25
2
Junction capacitance
Reveres recovery time
VR=0V
f=1MHz
pF
nS
IF=IR=10mA
Irr=0.1ХIR
RL=100Ω
3
Typical Characteristics
BAV199DW
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